Memory - Configuration Proms for FPGAs

Image Part Number Description / PDF Quantity Rfq
XC17S30XLVOG8C

XC17S30XLVOG8C

Xilinx

IC PROM SERIAL 3.3V 300K 8-SOIC

0

XC17S50ASO20I

XC17S50ASO20I

Xilinx

IC PROM SER 50000 I-TEMP 20-SOIC

0

XC17S15ASO20I

XC17S15ASO20I

Xilinx

IC PROM SER 5000 I-TEMP 20-SOIC

0

XC17128EPDG8C

XC17128EPDG8C

Xilinx

IC PROM SERIAL 128K 8-DIP

0

XC17S200APD8C

XC17S200APD8C

Xilinx

IC PROM SER 200000 C-TEMP 8-DIP

0

XC17S30XLPD8C

XC17S30XLPD8C

Xilinx

IC PROM PROG C-TEMP 3.3V 8-DIP

0

XC17S200APD8I

XC17S200APD8I

Xilinx

IC PROM SER 200000 I-TEMP 8-DIP

0

XC17S10PD8I

XC17S10PD8I

Xilinx

IC PROM PROG I-TEMP 3.3V 8-DIP

0

XC17V02PC44I

XC17V02PC44I

Xilinx

IC PROM SER 2MBIT 3.3V 44-PLCC

0

XC17S10VOG8C

XC17S10VOG8C

Xilinx

IC PROM SERIAL 10K 8-SOIC

0

XC17S20XLPD8I

XC17S20XLPD8I

Xilinx

IC PROM PROG I-TEMP 3.3V 8-DIP

0

XC17S20VO8C

XC17S20VO8C

Xilinx

IC PROM SER 200K 8-SOIC

0

XC17S10PD8C

XC17S10PD8C

Xilinx

IC PROM PROG C-TEMP 3.3V 8-DIP

0

XC17S10XLVO8C

XC17S10XLVO8C

Xilinx

IC 3V PROM SER 10K 8-SOIC

0

XC17S150AVO8I

XC17S150AVO8I

Xilinx

IC PROM SER 150K 8-SOIC

0

XC17S40XLPD8C

XC17S40XLPD8C

Xilinx

IC PROM PROG C-TEMP 3.3V 8-DIP

0

XC17V16PC44C

XC17V16PC44C

Xilinx

IC PROM SER C-TEMP 3.3V 44-PLCC

0

XC17S30PD8C

XC17S30PD8C

Xilinx

IC PROM PROG C-TEMP 5V 8-DIP

0

XC18V512PC20I

XC18V512PC20I

Xilinx

IC PROM SER I-TEMP 3.3V 20-PLCC

0

XC1701LPCG20C

XC1701LPCG20C

Xilinx

IC PROM SERIAL 1K 20-PLCC

0

Memory - Configuration Proms for FPGAs

1. Overview

Configuration PROMs (Programmable Read-Only Memory) for FPGAs are non-volatile memory devices designed to store configuration data for Field-Programmable Gate Arrays (FPGAs). These devices enable FPGAs to retain their programmed logic functionality after power cycling. Modern applications demand reliable, high-speed, and secure storage solutions for FPGA configurations in aerospace, telecommunications, automotive, and industrial systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
OTP PROMsOne-Time Programmable, low cost, high reliabilityIndustrial control systems
Flash PROMsReprogrammable, high density, moderate endurance5G base stations
EEPROMByte-alterable, high endurance, slower access speedMedical imaging equipment
FRAMLow-power, radiation-hardened, fast write speedAerospace avionics

3. Structure and Composition

Typical configuration PROMs feature:

  • Package types: TSSOP, VQFN, BGA
  • Memory array: Floating-gate or antifuse-based technology
  • Interface: SPI, BPI, or parallel bus
  • Voltage rails: 1.2V-3.3V operation with decoupling capacitors
  • Error correction: Built-in ECC for radiation environments

4. Key Technical Specifications

ParameterSignificance
Memory density (1Mb-4Gb)Determines maximum FPGA configuration size
Access time (55ns-120ns)Impacts system boot speed
Endurance (10k-100k cycles)Dictates reprogramming lifespan
Data retention (20-100 years)Critical for long-term reliability
Radiation hardness (SEL/SEU immunity)Essential for space applications

5. Application Areas

Primary application domains:

  • Telecommunications: 5G NR base stations, optical transceivers
  • Industrial: Programmable logic controllers (PLCs)
  • Medical: MRI scanners, patient monitoring systems
  • Automotive: ADAS sensor fusion units
  • Defense: Radar signal processing systems

6. Key Manufacturers and Products

ManufacturerProduct SeriesKey Features
MicrochipAT17F Series128Mb SPI interface, -40 C to +125 C
IntelEP180SSecure boot, TSMC 16nm process
XilinxS25FL-VOctal SPI, 400MHz clock rate
CypressFL-S SeriesEnd-to-end data protection

7. Selection Guidelines

Key selection factors:

  • Match memory density to target FPGA's bitstream size
  • Verify interface compatibility (SPI/BPI/parallel)
  • Evaluate environmental requirements (temperature, radiation)
  • Assess security features (encryption, authentication)
  • Consider programming infrastructure (socket compatibility)

8. Industry Trends

Current development trends include:

  • Transition to 3D NAND architecture for densities beyond 8Gb
  • Integration of hardware security modules (HSM)
  • Adoption of JEDEC Xccela interface for >400MB/s throughput
  • Development of radiation-tolerant devices for LEO satellites
  • Implementation of AI-driven wear-leveling algorithms
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