Memory

Part Number	Description / PDF	Quantity
S29AL008J70BFM023 IR (Infineon Technologies)	IC FLASH 8MBIT PARALLEL 48FBGA	0
CY7C024A-25JXC IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 84PLCC	377
CY7C144AV-25JXC IR (Infineon Technologies)	IC SRAM 64KBIT PARALLEL 68PLCC	340
CY7C1370DV25-250AXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	210
CY7C1514AV18-200BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1698
CY7C1360C-166AJXC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	3276
S26KS128SDPBHV020 IR (Infineon Technologies)	FLASH, 16MX8, 96NS, PBGA24	158
CY7C1420KV18-250BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	303
CY62157ELL-55BVXE IR (Infineon Technologies)	IC SRAM 8MBIT PARALLEL 48VFBGA	6183
CY7C1470BV25-250BZXC IR (Infineon Technologies)	ZBT SRAM, 2MX36, 3NS PBGA165	95
CY7C1318CV18-200BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	370
CY7C1041CV33-20ZSXE IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 20NS PDS	0
CY7C1021CV26-15ZSXET IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 44TSOP II	445
CY7C194BN-15PC IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 24DIP	653
CY14B104N-BA45XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	300
CY62137CV30LL-70BVXE IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 48VFBGA	3447
CY7C1356C-166AXIT IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 100TQFP	0
S29CD016J1MFAM112 IR (Infineon Technologies)	IC FLASH 16MBIT PARALLEL 80FBGA	0
CY7C25682KV18-500BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	243
CY7C1514AV18-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	1598

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)