Memory

Part Number	Description / PDF	Quantity
S29AL008J70TFA023 IR (Infineon Technologies)	IC FLASH 8MBIT PARALLEL 48TSOP	4535
CY7C1370D-167AXCT IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 100TQFP	18
CY7C1543V18-333BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	92
CY7C1518KV18-300BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	590
CY7C12481KV18-400BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	680
CY7C1145KV18-400BZXC IR (Infineon Technologies)	QDR SRAM, 512KX36, 0.45NS PBGA16	179
CY7C1318JV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	829
CY7C1393KV18-333BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	172
CY7C1314BV18-250BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	2116
CY7C166-15VC IR (Infineon Technologies)	STANDARD SRAM, 16KX4, 15NS, CMOS	3122
CY62128EV30LL-45ZXA IR (Infineon Technologies)	STANDARD SRAM, 128KX8, 45NS PDSO	2311
CY7C1011CV33-12AXI IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 44TQFP	871
CY7C1165KV18-400BZC IR (Infineon Technologies)	QDR SRAM, 512KX36, 0.45NS, CMOS,	363
CY7C1520KV18-300BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	47
CY62128EV30LL-45ZAXA IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32STSOP	618
CY14E256L-SZ35XI IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32SOIC	0
CY7C1515V18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	183
CY7C1520KV18-300BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	257
CY7C11501KV18-400BZXI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	655
CY7C1565KV18-450BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	174

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)