Memory

Part Number	Description / PDF	Quantity
CY7C1568KV18-450BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	959
CY7C11681KV18-400BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	65
CY14B101K-SP45XI IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 48SSOP	1194
S27KS0641DPBHB020 IR (Infineon Technologies)	PARALLEL NOR HYPERFLASH, 64MB (8	270
CY14ME064Q2B-SXI IR (Infineon Technologies)	IC NVSRAM 64KBIT SPI 40MHZ 8SOIC	5327
S25FL512SAGMFVR10 IR (Infineon Technologies)	IC FLASH 512MBIT SPI/QUAD 16SOIC	415
CY7C1425KV18-300BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	187
CY7C1041G18-15ZSXI IR (Infineon Technologies)	STANDARD SRAM, 256KX16, 15NS, CM	0
CY7C1385D-133AXI IR (Infineon Technologies)	CACHE SRAM, 512KX32, 6.5NS PQFP1	860
CYDC256B16-55AXI IR (Infineon Technologies)	IC SRAM 256KBIT PARALLEL 100TQFP	2251
CY7C1168V18-400BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	280
CY62148VNLL-70ZSXI IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32TSOP II	328
CY14B101K-SP35XI IR (Infineon Technologies)	IC NVSRAM 1MBIT PARALLEL 48SSOP	2187
CY7C1383F-133BZI IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	814
S29GL256N11FFA013 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 64FBGA	2435
CY7C2563KV18-500BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	126
CY7C1305TV25-167BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	179
CY7C25632KV18-500BZXI IR (Infineon Technologies)	QDR SRAM, 4MX18, 0.45NS PBGA165	582
CY7C1418KV18-250BZC IR (Infineon Technologies)	DDR SRAM, 2MX18, 0.45NS, CMOS, P	601
CY7C1446AV25-250BGI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 209FBGA	178

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)