Memory

Part Number	Description / PDF	Quantity
CY14B104N-ZS45XI IR (Infineon Technologies)	IC NVSRAM 4MBIT PAR 44TSOP II	198
CY7C1413AV18-200BZI IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	123
S29GL032N90TFA023 IR (Infineon Technologies)	FLASH, 2MX16, 90NS, PDSO56	0
CY7C1315KV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	567
CY62128BNLL-70ZXA IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 32TSOP I	589
CY7C1318TV18-167BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	308
CY7C2565KV18-450BZI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	71
CY14B101NA-ZS45XI IR (Infineon Technologies)	NON-VOLATILE SRAM, 64KX16, 45NS	225
CY7C1011DV33-10BVXIT IR (Infineon Technologies)	IC SRAM 2MBIT PARALLEL 48VFBGA	17400
CY7C2563XV18-633BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	245
CY62256L-70SNXCT IR (Infineon Technologies)	IC SRAM 256KBIT 70NS 28SOIC	7800
CY7C1414TV18-200BZXC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	185
CY7C1020DV33-10ZSXIT IR (Infineon Technologies)	IC SRAM 512KBIT PAR 44TSOP II	1000
CY7C1518KV18-333BZXI IR (Infineon Technologies)	DDR SRAM, 4MX18, 0.45NS PBGA165	662
CY7C1520JV18-300BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	3037
CY7C1460AV33-167AXC IR (Infineon Technologies)	ZBT SRAM, 1MX36, 3.4NS PQFP100	515
CY7C1006D-10VXI IR (Infineon Technologies)	IC SRAM 1MBIT PARALLEL 28SOJ	13262
S29AL016J70TFA010 IR (Infineon Technologies)	IC FLASH 16MBIT PARALLEL 48TSOP	0
CY7C15632KV18-400BZXC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	62
S34ML01G200TFI000 IR (Infineon Technologies)	FLASH, 128MX8, 25NS, PDSO48	927

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)