Memory

Part Number	Description / PDF	Quantity
AT24C16B-TH-B Atmel (Microchip Technology)	IC EEPROM 16KBIT I2C 1MHZ 8TSSOP	865
AT24C256N-10SQ-2.7 Atmel (Microchip Technology)	IC EEPROM 256KBIT I2C 8SOIC	13193
AT28C256F-20FM/883 Atmel (Microchip Technology)	IC EEPROM 256KBIT PAR 28FLATPK	43
AT25320AN-10SQ-2.7 Atmel (Microchip Technology)	EEPROM, 4KX8, SERIAL, CMOS	667
AT24C64AN-10SQ-2.7 Atmel (Microchip Technology)	IC EEPROM 64KBIT I2C 8SOIC	4443
AT93C56A-10SQ-2.7 Atmel (Microchip Technology)	EEPROM, 128X16, SERIAL, CMOS	47551
AT28HC256E-90FM/883 Atmel (Microchip Technology)	IC EEPROM 256KBIT PAR 28FLATPK	61
AT25010A-10TQ-2.7 Atmel (Microchip Technology)	EEPROM, 128X8, SERIAL, CMOS	368
AT24C04B-TSU-T Atmel (Microchip Technology)	IC EEPROM 4KBIT I2C 1MHZ SOT23-5	38054
AT34C02C-THDD-T Atmel (Microchip Technology)	AT34C02 - EEPROM, 256X8, SERIAL	5000
AT25080N-10SI-2.7 Atmel (Microchip Technology)	IC EEPROM 8KBIT SPI 3MHZ 8SOIC	9617
AT34C02B-10TU-1.7 Atmel (Microchip Technology)	IC EEPROM 2KBIT I2C 8TSSOP	95697
AT24C01BN-SP25-T Atmel (Microchip Technology)	IC EEPROM 1KBIT I2C 1MHZ	13485
AT24C16A-10TQ-2.7 Atmel (Microchip Technology)	IC EEPROM 16KBIT I2C 8TSSOP	338
AT25080AN-10SQ-2.7 Atmel (Microchip Technology)	EEPROM, 1KX8, SERIAL, CMOS	3142
AT24C256BN-10SU-1.8 Atmel (Microchip Technology)	IC EEPROM 256KBIT I2C 1MHZ 8SOIC	191
AT25020N-10SA-5.0C Atmel (Microchip Technology)	EEPROM, 256X8, SERIAL, CMOS	40000
AT34C02BN-10SU-1.7 Atmel (Microchip Technology)	EEPROM, 256X8, SERIAL, CMOS	60513
AT93C46D-TP25-T Atmel (Microchip Technology)	AT93C46 - EEPROM, 64X16, SERIAL	8867
AT49BV002AT-70VI Atmel (Microchip Technology)	IC FLASH 2MBIT PARALLEL 32VSOP	39520

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)