Memory

Image Part Number Description / PDF Quantity Rfq
AT34C02C-TH-T

AT34C02C-TH-T

Atmel (Microchip Technology)

IC EEPROM 2KBIT I2C 8TSSOP

2232838

AT25128-10PC-2.7

AT25128-10PC-2.7

Atmel (Microchip Technology)

IC EEPROM 128KBIT SPI 3MHZ 8DIP

4212

AT24MAC602-XHM-B

AT24MAC602-XHM-B

Atmel (Microchip Technology)

IC EEPROM 2KBIT I2C 1MHZ 8TSSOP

5000

AT24HC04BN-SP25-B

AT24HC04BN-SP25-B

Atmel (Microchip Technology)

AT24HC04 - EEPROM, 512X8, SERIAL

2637

AT25040A-10TQ-2.7

AT25040A-10TQ-2.7

Atmel (Microchip Technology)

EEPROM, 512X8, SERIAL, CMOS

14863

AT24HC02BN-SP25-B

AT24HC02BN-SP25-B

Atmel (Microchip Technology)

AT24HC02 - EEPROM, 256X8, SERIAL

2883

AT25HP256-10PI-2.7

AT25HP256-10PI-2.7

Atmel (Microchip Technology)

IC EEPROM 256KBIT SPI 10MHZ 8DIP

0

AT28C010-15LM/883

AT28C010-15LM/883

Atmel (Microchip Technology)

IC EEPROM 1MBIT PARALLEL 44CLCC

4

AT93C66A-10TQ-2.7

AT93C66A-10TQ-2.7

Atmel (Microchip Technology)

EEPROM, 256X16, SERIAL, CMOS

13613

AT24C128N-10SQ-2.7

AT24C128N-10SQ-2.7

Atmel (Microchip Technology)

IC EEPROM 128KBIT I2C 8SOIC

2571

AT24C512BW-SH25-T

AT24C512BW-SH25-T

Atmel (Microchip Technology)

IC EEPROM 512KBIT I2C 1MHZ 8SOIC

185254

AT25020AN-10SQ-2.7

AT25020AN-10SQ-2.7

Atmel (Microchip Technology)

EEPROM, 256X8, SERIAL, CMOS

1825

AT25320A-10TQ-2.7

AT25320A-10TQ-2.7

Atmel (Microchip Technology)

EEPROM, 4KX8, SERIAL, CMOS

3200

AT24C02BY6-YH-T

AT24C02BY6-YH-T

Atmel (Microchip Technology)

IC EEPROM 2KBIT I2C 8MINI MAP

4000

AT25160B-MEHL-T

AT25160B-MEHL-T

Atmel (Microchip Technology)

IC EEPROM 16KBIT SPI 20MHZ 8XDFN

0

AT24C256C-SSHLEM-T

AT24C256C-SSHLEM-T

Atmel (Microchip Technology)

IC EEPROM 256KBIT I2C 1MHZ 8SOIC

4476

AT49BV4096A-90TI

AT49BV4096A-90TI

Atmel (Microchip Technology)

IC FLASH 4MBIT PARALLEL 48TSOP

530

AT93C66-10TI-2.7

AT93C66-10TI-2.7

Atmel (Microchip Technology)

IC EEPROM 4KBIT SPI 2MHZ 8TSSOP

8900

AT24C1024BW-SH-B

AT24C1024BW-SH-B

Atmel (Microchip Technology)

IC EEPROM 1MBIT I2C 1MHZ 8SOIC

0

AT93C66A-SQ27U2

AT93C66A-SQ27U2

Atmel (Microchip Technology)

AT93C66 - EEPROM, 256X16, SERIAL

3300

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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