Memory

Image Part Number Description / PDF Quantity Rfq
AT24C04BN-SP25-B

AT24C04BN-SP25-B

Atmel (Microchip Technology)

IC EEPROM 4KBIT I2C 1MHZ

947

AT24C08BU3-UU-T

AT24C08BU3-UU-T

Atmel (Microchip Technology)

IC EEPROM 8KBIT I2C 1MHZ 8VFBGA

35116

AT24C16B-TSU-T

AT24C16B-TSU-T

Atmel (Microchip Technology)

IC EEPROM 16KBIT I2C SOT23-5

2234

AT34C02-10TI-2.7

AT34C02-10TI-2.7

Atmel (Microchip Technology)

IC EEPROM 2KBIT I2C 8TSSOP

10000

AT93C46DN-SP25-B

AT93C46DN-SP25-B

Atmel (Microchip Technology)

AT93C46 - EEPROM, 64X16, SERIAL

174557

AT28C010E-15LM/883

AT28C010E-15LM/883

Atmel (Microchip Technology)

IC EEPROM 1MBIT PARALLEL 44CLCC

16

AT24C01BN-SP25-B

AT24C01BN-SP25-B

Atmel (Microchip Technology)

IC EEPROM 1KBIT I2C 1MHZ

5041

AT25320B-MEHL-T

AT25320B-MEHL-T

Atmel (Microchip Technology)

AT25320 - EEPROM, 4KX8, SERIAL

4500

AT24C64A-10TQ-2.7

AT24C64A-10TQ-2.7

Atmel (Microchip Technology)

IC EEPROM 64KBIT I2C 8TSSOP

3820

AT34C02C-TH-B

AT34C02C-TH-B

Atmel (Microchip Technology)

IC EEPROM 2KBIT I2C 8TSSOP

0

AT49F4096A-70TC

AT49F4096A-70TC

Atmel (Microchip Technology)

IC FLASH 4MBIT PARALLEL 48TSOP

22454

AT24C08D-UUM0B-T

AT24C08D-UUM0B-T

Atmel (Microchip Technology)

IC EEPROM 8KBIT I2C 1MHZ 4WLCSP

1750

AT24C512-10TU-2.7

AT24C512-10TU-2.7

Atmel (Microchip Technology)

IC EEPROM 512KBIT I2C 8TSSOP

839

AT24C02B-TH-T

AT24C02B-TH-T

Atmel (Microchip Technology)

IC EEPROM 2KBIT I2C 1MHZ 8TSSOP

3047

AT25020A-10TQ-2.7

AT25020A-10TQ-2.7

Atmel (Microchip Technology)

EEPROM, 256X8, SERIAL, CMOS

3100

AT28C010-20LM/883

AT28C010-20LM/883

Atmel (Microchip Technology)

IC EEPROM 1MBIT PARALLEL 44CLCC

0

AT24C512C-SSHMGT-T

AT24C512C-SSHMGT-T

Atmel (Microchip Technology)

IC EEPROM 512KBIT I2C 8SOIC

3100

AT25160A-10TU-1.8

AT25160A-10TU-1.8

Atmel (Microchip Technology)

IC EEPROM 16KBIT SPI 8TSSOP

65639

AT93C46D-TP25-B

AT93C46D-TP25-B

Atmel (Microchip Technology)

AT93C46 - EEPROM, 64X16, SERIAL

2460

5962-8852503ZA

5962-8852503ZA

Atmel (Microchip Technology)

EEPROM, 32KX8, 250NS, PARALLEL

163

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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