Memory

Image Part Number Description / PDF Quantity Rfq
AT25128AW-SQ27CL

AT25128AW-SQ27CL

Atmel (Microchip Technology)

AT25128 - EEPROM, 16KX8, SERIAL

66000

AT25320AN-SQ27T7

AT25320AN-SQ27T7

Atmel (Microchip Technology)

AT25320 - EEPROM, 4KX8, SERIAL

8880

AT25256AN-SQ27AL

AT25256AN-SQ27AL

Atmel (Microchip Technology)

AT25256 - EEPROM, 32KX8, SERIAL

2594

5962-8852506UA

5962-8852506UA

Atmel (Microchip Technology)

EEPROM, 32KX8, 150NS, PARALLEL

17

AT28LV256E-20SU

AT28LV256E-20SU

Atmel (Microchip Technology)

AT28LV256E- EEPROM, 32KX8

1014

AT34C02CY6-YHAT-T

AT34C02CY6-YHAT-T

Atmel (Microchip Technology)

AT34C02 - EEPROM, 256X8, SERIAL

4000

AT24C02BN-SP25Y6-T

AT24C02BN-SP25Y6-T

Atmel (Microchip Technology)

IC EEPROM 2KBIT I2C 1MHZ

4361

AT93C46DN-SP25-T

AT93C46DN-SP25-T

Atmel (Microchip Technology)

AT93C46 - EEPROM, 64X16, SERIAL

0

AT93C46D-SP25DX

AT93C46D-SP25DX

Atmel (Microchip Technology)

AT93C46 - EEPROM, 64X16, SERIAL

46071

AT93C56A-SQ27U5

AT93C56A-SQ27U5

Atmel (Microchip Technology)

AT93C56 - EEPROM, 128X16, SERIAL

4878

AT25128AN-SQ27V4

AT25128AN-SQ27V4

Atmel (Microchip Technology)

AT25128 - EEPROM, 16KX8, SERIAL

1992

AT25512-W-11

AT25512-W-11

Atmel (Microchip Technology)

AT25512 - EEPROM, 64KX8, SERIAL

2560

AT25160AN-SQ27T6

AT25160AN-SQ27T6

Atmel (Microchip Technology)

AT25160 - EEPROM, 2KX8, SERIAL

1569

AT25080AN-SQ27DB

AT25080AN-SQ27DB

Atmel (Microchip Technology)

AT25080 - EEPROM, 1KX8, SERIAL

2400

AT25128AN-SQ27T9

AT25128AN-SQ27T9

Atmel (Microchip Technology)

AT25128 - EEPROM, 16KX8, SERIAL

2333

AT28C010-15LM883

AT28C010-15LM883

Atmel (Microchip Technology)

DUAL MARKED (5962-3826705MYA)

55

AT28C010E-12EM

AT28C010E-12EM

Atmel (Microchip Technology)

EEPROM, 128KX8, 120NS, PARALLEL

37

AT25320AN-SQ27EI

AT25320AN-SQ27EI

Atmel (Microchip Technology)

AT25320 - EEPROM, 4KX8, SERIAL

2500

AT93C46-SQ27Q1

AT93C46-SQ27Q1

Atmel (Microchip Technology)

AT93C46 - EEPROM, 64X16, SERIAL

1642

AT28HC256E-80FM

AT28HC256E-80FM

Atmel (Microchip Technology)

EEPROM, 32KX8, 90NS, PARALLEL

33

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
DRAM (Dynamic RAM)High-density, low-cost, requires periodic refreshPCs, Servers, Graphics Cards
NAND FlashNon-volatile, high endurance, block-level accessSSDs, USB Drives, Mobile Storage
SRAM (Static RAM)High-speed, low density, no refresh requiredCache Memory, Networking Equipment
NOR FlashRandom access, execute-in-place capabilityEmbedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)Non-volatile, unlimited endurance, low powerIoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

  • Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
  • Address Decoder: Selects specific memory locations
  • I/O Circuits: Data input/output interfaces
  • Control Logic: Manages read/write operations and timing
  • Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

ParameterDescriptionImportance
Storage CapacityData volume (Gb/GiB)Determines system memory limits
Access Timens/predictable latencyImpacts processing speed
Power ConsumptionmW/MHzAffects battery life and thermal design
EnduranceP/E cycles (Flash)Dictates product lifespan
Data RetentionYears (non-volatile)Critical for long-term storage

5. Application Areas

  • Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
  • Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
  • Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
  • Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

ManufacturerRepresentative Products
Samsung ElectronicsV-NAND (9x-layer), LPDDR5X
SK hynixHBM3 (8GB/s bandwidth), GDDR6
Microchip TechnologySerial NOR Flash (SST26)
Kioxia CorporationBiCS FLASH (3D NAND)
Infineon TechnologiesMRAM (40nm process)

7. Selection Recommendations

Key considerations:

  • Match memory type to application requirements (e.g., NOR Flash for code storage)
  • Evaluate bandwidth vs. latency tradeoffs
  • Analyze temperature and vibration specifications
  • Assess long-term supply stability
  • Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

  • 3D NAND scaling beyond 200 layers
  • Emerging memories (ReRAM, PCM) for AI acceleration
  • Package-on-Package (PoP) integration
  • AI-optimized memory architectures (Processing-in-Memory)
  • Green manufacturing processes (EUV lithography)
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