Memory

Part Number	Description / PDF	Quantity
CY7C195-12VC Rochester Electronics	STANDARD SRAM, 64KX4, 12NS	3699
CY7C1325A-117AC Rochester Electronics	STANDARD SRAM, 256KX18	7246
27S21DM/B Rochester Electronics	OTP ROM, 256X4, 60NS, TTL CDIP16	0
CY7C1046CV33-10VC Rochester Electronics	STANDARD SRAM, 1MX4, 10NS	262
CYD01S18V-133BBI Rochester Electronics	DUAL-PORT SRAM, 64KX18, 4NS	85
CY7C1049B-25VCT Rochester Electronics	STANDARD SRAM, 512KX8, 25NS	500
CY7C106B-20VC Rochester Electronics	STANDARD SRAM, 256KX4, 20NS	322
CY7C1327A-133AC Rochester Electronics	STANDARD SRAM, 256KX18	64016
CY7C1387BV25-150BGC Rochester Electronics	CACHE SRAM, 1MX18, 3.8NS	34
CY7C1355C-133AXI Rochester Electronics	ZBT SRAM, 256KX36, 6.5NS	195
CY7C1049CV33-10ZXC Rochester Electronics	STANDARD SRAM	2524
5962-8993502ZA Rochester Electronics	STANDARD SRAM, 64KX4, 35NS, CMOS	43
CY7C1325F-100AIT Rochester Electronics	256KX18 3.3V SYNC-FT SRAM (2.5/3	1100
CY7C1380B-150AC Rochester Electronics	IC SRAM 18MBIT PARALLEL 100TQFP	21
CY62256VNLL-70SNC Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	1557
CY7C1381B-133AC Rochester Electronics	STANDARD SRAM, 512KX36, 6.5NS	56
CY7C1360A-166AJC Rochester Electronics	IC SRAM 9MBIT PARALLEL 100TQFP	1243
CY62157DV18L-70BVI Rochester Electronics	STANDARD SRAM, 512KX16, 70NS	144
TE28F800B5B90 Rochester Electronics	FLASH, 1MX8, 90NS, PDSO48	19340
CY7C199-25VI Rochester Electronics	STANDARD SRAM, 32KX8, 25NS	1357

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)