Memory

Part Number	Description / PDF	Quantity
CY7C1386B-150AI Rochester Electronics	CACHE SRAM, 512KX36, 3.8NS	85
CY62256NLL-70ZRI Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	865
CY62126DV30LL-55BVI Rochester Electronics	STANDARD SRAM, 64KX16, 55NS	3378
CY7C1367A-166ACT Rochester Electronics	SRAM CHIP SYNC DUAL 3.3V 9M BIT	750
CY7C146-15JC Rochester Electronics	DUAL-PORT SRAM, 2KX8, 15NS	217
CY62147DV18LL-55BVI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	470
CY7C1347C-166AC Rochester Electronics	CACHE SRAM, 128KX36, 3.5NS	510
CY7C195B-15VC Rochester Electronics	STANDARD SRAM, 64KX4, 15NS	1989
CY62147CV33LL-55BAI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	1049
CY62147BV18LL-70BAI Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	6339
CY7C1049CV33-10ZXCT Rochester Electronics	STANDARD SRAM	20000
CY62157DV30L-55ZSI Rochester Electronics	STANDARD SRAM, 512KX16, 55NS	1151
CY7C1420KV18-300XCKG Rochester Electronics	SYNC RAM	718
CY62148CV30LL-70BAI Rochester Electronics	STANDARD SRAM, 512KX8, 70NS	13657
CY7C1041BV33L-20ZI Rochester Electronics	256K X 16 SRAM	479
CY7C1046CV33-12VCT Rochester Electronics	STANDARD SRAM, 1MX4, 12NS	9198
CY7C1011CV33-10BVI Rochester Electronics	STANDARD SRAM, 128KX16	302
CY7C1020B-12VC Rochester Electronics	STANDARD SRAM, 32KX16	254
CY7C141-55NC Rochester Electronics	DUAL-PORT SRAM, 1KX8	267
CY7C1570V18-375BZC Rochester Electronics	DDR SRAM, 2MX36, 0.45NS	198

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)