Memory

Part Number	Description / PDF	Quantity
CY7C1345B-117AC Rochester Electronics	IC SRAM 4.5MBIT PARALLEL 100TQFP	4652
CY7C1361C-133BGC Rochester Electronics	CACHE SRAM, 256KX36, 6.5NS	389
CY7C1009BN-15VC Rochester Electronics	STANDARD SRAM, 128KX8	601
CY62256VL-70SNC Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	256
CY7C1366A-200AJC Rochester Electronics	CACHE SRAM, 256KX36, 3NS	487
CY7C057V-12AC Rochester Electronics	IC SRAM 1.152MBIT PAR 144TQFP	833
CY62128BLL-55ZRIT Rochester Electronics	STANDARD SRAM, 128KX8	585
CY62128DV30LL-70ZAXI Rochester Electronics	STANDARD SRAM, 128KX8	269
CY27C256A-200WMB Rochester Electronics	UVPROM, 32KX8, 200NS	71
CY27C256A-150JCQ Rochester Electronics	1-MEGABIT (32K X 8) CMOS EPROM	716
CY62147DV30L-70BVI Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	291
AM27C512-150JI Rochester Electronics	OTP ROM, 64KX8, 150NS, CMOS, PQC	50
CY62147CV30LL-70BVIT Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	7975
CY7C1325B-100BGCT Rochester Electronics	CACHE SRAM, 256KX18, 8NS	6500
CY62148CV33LL-70BVI Rochester Electronics	STANDARD SRAM, 512KX8, 70NS	700
CY7C195-15VCT Rochester Electronics	STANDARD SRAM, 64KX4, 15NS	29944
CY62126DV30LL-70ZXI Rochester Electronics	STANDARD SRAM, 64KX16, 70NS	5032
CY7C194-45VCT Rochester Electronics	STANDARD SRAM, 64KX4, 45NS, CMOS	25000
CY7C1024AV33-10AC Rochester Electronics	STANDARD SRAM, 128KX24	1809
CY7C1021BV33L-10VXC Rochester Electronics	64K X 16 3.3V LOW POWER FAST ASY	272

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)