Memory

Part Number	Description / PDF	Quantity
CY7C1333-50AC Rochester Electronics	ZBT SRAM, 64KX32, 14NS	2689
CY7C1329G-166AC Rochester Electronics	CACHE SRAM, 64KX32, 3.5NS	185
CY7C1041BNV33L-12VC Rochester Electronics	STANDARD SRAM, 256KX16	221
CY7C195B-12VC Rochester Electronics	STANDARD SRAM, 64KX4, 12NS	142
CY7C106BN-15VC Rochester Electronics	STANDARD SRAM, 256KX4, 15NS	9729
CY7C1347F-200BGC Rochester Electronics	CACHE SRAM, 128KX36, 2.8NS	325
CY7C0241-25AC Rochester Electronics	DUAL-PORT SRAM, 4KX18, 25NS	4918
CY62146CV30LL-55BAI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	216
CY7C1041BV33-20ZIT Rochester Electronics	STANDARD SRAM, 256KX16, 20NS	4974
CY62137CV18LL-55BAI Rochester Electronics	STANDARD SRAM, 128KX16	22448
CYDMX128A16-65BVXIKB Rochester Electronics	DUAL PORT RAM	917
5962-9174402MXX Rochester Electronics	UVPROM, 32KX8, CMOS, CDIP28	80
CY62256VLL-70ZRIT Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	9000
CY62128BNLL-55ZXIT Rochester Electronics	IC SRAM 1MBIT PARALLEL 32TSOP I	1500
CY7C225A-30JI Rochester Electronics	OTP ROM, 512X8, CMOS, PQCC28	447
CY7C1366A-166BGC Rochester Electronics	CACHE SRAM, 256KX36, 3.5NS	51
CY7C1021V33L-15VC Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	755
CY62256VLL-70ZRI Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	4410
CY7C1370BV25-133BGC Rochester Electronics	ZBT SRAM, 512KX36, 4.2NS	349
CY7C1021CV33-8VC Rochester Electronics	STANDARD SRAM, 64KX16, 8NS	623

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)