Memory

Part Number	Description / PDF	Quantity
CY7C1041BV33-15VC Rochester Electronics	IC SRAM 4MBIT PARALLEL 44SOJ	5153
CY7B139-35JC Rochester Electronics	DUAL-PORT SRAM, 4KX9, 35NS,	126
CY7C1360C-166BZXC Rochester Electronics	CACHE SRAM, 256KX36, 3.5NS	90
CY7C1340A-100ACT Rochester Electronics	SRAM CHIP SYNC SINGLE 3.3V 4M BI	4629
CY7C1021V33-15ZIT Rochester Electronics	SRAM CHIP ASYNC SINGLE 3.3V 1M B	1957
CY62158DV30LL-55BVI Rochester Electronics	STANDARD SRAM, 1MX8, 55NS	315
29705APC Rochester Electronics	SRAM	87
CY62128BLL-55ZRI Rochester Electronics	STANDARD SRAM, 128KX8	3998
CY7C1361B-100BGCT Rochester Electronics	SRAM 3.3V 9M-BIT 256K X 36 8.5NS	9740
CY62126DV30L-55BVI Rochester Electronics	STANDARD SRAM, 64KX16, 55NS	5623
CY7C1325G-133BGXC Rochester Electronics	CACHE SRAM, 256KX18, 6.5NS	326
CY7C187-35VXC Rochester Electronics	STANDARD SRAM, 64KX1, 35NS, CMOS	969
CY7C1020V33-12ZC Rochester Electronics	STANDARD SRAM, 32KX16	383
CY7C166-20VC Rochester Electronics	STANDARD SRAM, 16KX4, 20NS, CMOS	7718
CY7C145-35JC Rochester Electronics	DUAL-PORT SRAM, 8KX9, 35NS	91
CY7C106B-25VCT Rochester Electronics	STANDARD SRAM, 256KX4, 25NS	4500
CY7C109BN-20VCT Rochester Electronics	STANDARD SRAM, 128KX8	460
S34ML04G100BHA000 Rochester Electronics	IC FLASH 4GBIT PARALLEL 63BGA	80
CY7C109V33-20VC Rochester Electronics	STANDARD SRAM, 128KX8	73795
CY7C1041BV33-15VIT Rochester Electronics	STANDARD SRAM, 256KX16, 15NS	2100

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)