Memory

Part Number	Description / PDF	Quantity
CY62128BNLL-70SXCT Rochester Electronics	IC SRAM 1MBIT PARALLEL 32SOIC	1000
CY7C1340F-100AC Rochester Electronics	CACHE SRAM, 128KX32, 4.5NS	98
27S181PC-G Rochester Electronics	AM27S181 - 1024X8 BIPOLAR PROM	2645
CY7C244-55WC Rochester Electronics	UVPROM, 4KX8, 55NS, CMOS	3188
CY7C056V-15BBC Rochester Electronics	DUAL-PORT SRAM, 16KX36	1066
CY62146DV30LL-55ZSXI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	1753
CY7C1021V33-15VIT Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	500
CY7C1460SV25-167BZC Rochester Electronics	IC SRAM 36MBIT PARALLEL 165FBGA	325
CY7C09269V-7AC Rochester Electronics	DUAL-PORT SRAM, 16KX16, 7.5NS	38
CY7C271-55PC Rochester Electronics	OTP ROM, 32KX8, 55NS PDIP28	601
PY7C1041CV33-20ZI Rochester Electronics	CACHE SRAM, 128KX36, 4NS,	1188
CY7C107B-20VC Rochester Electronics	STANDARD SRAM, 1MX1, 20NS	4388
CY62147CV18LL-55BAI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	1441
CY62147CV18LL-70BAIT Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	10000
CY7C024-55JC Rochester Electronics	DUAL-PORT SRAM, 4KX16, 55NS	1344
CY7C0241-15AC Rochester Electronics	DUAL-PORT SRAM, 4KX18, 15NS	13110
CYDMX128C16-65BVXI Rochester Electronics	DUAL PORT RAM	4122
CY62127DV30L-55ZXI Rochester Electronics	STANDARD SRAM, 64KX16, 55NS	7464
CY7C1356A-133AC Rochester Electronics	IC SRAM 9MBIT PARALLEL 100TQFP	6642
CY7C1021B-15ZCT Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	2650

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)