Memory

Part Number	Description / PDF	Quantity
CY62147CV30LL-55BAI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	1125
CY62256LL-70ZRIT Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	16500
CY7C025-35AIT Rochester Electronics	DUAL-PORT SRAM, 8KX16, 35NS	5647
CY62128DV30LL-55SI Rochester Electronics	STANDARD SRAM, 128KX8	2764
D2764A-2 Rochester Electronics	UVPROM, 8KX8, 200NS, MOS, CDIP28	31
CY7C277-40WC Rochester Electronics	UVPROM, 32KX8, 20NS	139
CY7C1021B-12ZC Rochester Electronics	STANDARD SRAM, 64KX16	1728
CY7C1325B-100BGC Rochester Electronics	CACHE SRAM, 256KX18, 8NS	3398
5962-8764813QYA Rochester Electronics	UVPROM, 64KX8, 200NS, CMOS	192
CY7C197-35VCT Rochester Electronics	STANDARD SRAM, 256KX1, 35NS	865
CY7C026A-20AC Rochester Electronics	IC SRAM 256KBIT PARALLEL 100TQFP	1804
CY7C0251E-15AXC Rochester Electronics	IC SRAM 144K PARALLEL 100TQFP	176
CY7C1021BV33-10VC Rochester Electronics	IC SRAM 1MBIT PARALLEL 44SOJ	826
CY62148DV30LL-70BVIT Rochester Electronics	STANDARD SRAM, 512KX8, 70NS	4000
CY7C293A-25PC Rochester Electronics	OTP ROM, 2KX8, 25NS	197
CY62147DV30L-55BVI Rochester Electronics	STANDARD SRAM, 256KX16, 55NS	269
CY62147CV30LL-70BVI Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	1966
CY7C1370BV25-133AC Rochester Electronics	IC SRAM 18MBIT PARALLEL 100TQFP	93
CY7C291AL-50JC Rochester Electronics	OTP ROM, 2KX8, 50NS PQCC28	112
CY7C1020B-15VC Rochester Electronics	STANDARD SRAM, 32KX16, 15NS	1201

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)