Memory

Part Number	Description / PDF	Quantity
CY62146DV30LL-55ZSXIT Rochester Electronics	SRAM CHIP ASYNC SINGLE 3V 4M BIT	4000
CY27H256-25ZC Rochester Electronics	OTP ROM, 32KX8, 25NS PDSO28	884
CY7C195-25VC Rochester Electronics	STANDARD SRAM, 64KX4, 25NS	2398
CY7C0837AV-167BBC Rochester Electronics	DUAL-PORT SRAM, 32KX18, 4NS	406
2102-1N Rochester Electronics	SRAM, 1KX1, 500NS, MOS, PDIP16	328
CY7C1327G-133BGC Rochester Electronics	CACHE SRAM, 256KX18, 4NS	362
CY7C1461SV33-133AXC Rochester Electronics	IC SRAM 36MBIT PARALLEL 100TQFP	361
CY7C1325B-100AI Rochester Electronics	CACHE SRAM, 256KX18, 8NS	173
CY62136VNLL-70ZXI Rochester Electronics	STANDARD SRAM	249
CY7C1007B-25VC Rochester Electronics	STANDARD SRAM, 1MX1, 25NS	467
CY7C140-35DMB Rochester Electronics	DUAL-PORT SRAM, 1KX8	13
CY62128BLL-70ZXCT Rochester Electronics	STANDARD SRAM, 128KX8	1457
CY7C0831AV-133BBI Rochester Electronics	DUAL-PORT SRAM, 128KX18, 4NS	177
CY7C1361A-100AI Rochester Electronics	STANDARD SRAM, 256KX36	607
CY62157CV18LL-55BAI Rochester Electronics	STANDARD SRAM, 512KX16, 55NS	2204
CY7C1334-50ACT Rochester Electronics	ZBT SRAM, 64KX32, 10NS	1500
CY7C1399B-12ZCT Rochester Electronics	CACHE SRAM, 32KX8, 12NS PDSO28	27000
CY62167DV20LL-55BVI Rochester Electronics	STANDARD SRAM, 1MX16	120
CY7C1021BV33-12BAC Rochester Electronics	STANDARD SRAM, 64KX16	78042
CY7C1049B-25VC Rochester Electronics	STANDARD SRAM, 512KX8, 25NS	902

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)