Memory

Part Number	Description / PDF	Quantity
CY62128VL-70ZAC Rochester Electronics	STANDARD SRAM, 128KX8	428
CY7C1312SV18-167BZXC Rochester Electronics	SYNC RAM	327
CYD02S36V-133BBC Rochester Electronics	DUAL-PORT SRAM, 64KX36	96
CY7C194-45PC Rochester Electronics	STANDARD SRAM, 64KX4, 45NS	1469
CY7C1021BV33L-15BAI Rochester Electronics	STANDARD SRAM, 64KX16, 15NS	919
CY7C1354S-200BGC Rochester Electronics	IC SRAM 9MBIT PARALLEL 119PBGA	1338
CY7C1347B-100BGC Rochester Electronics	CACHE SRAM, 128KX36, 5.5NS	2269
CY62128BNLL-55SI Rochester Electronics	STANDARD SRAM, 128KX8	325
C2663KV18-450BZI Rochester Electronics	IC SRAM 144MBIT 450MHZ 165FBGA	5
FM25V02-PG Rochester Electronics	FRAM MEMORY CIRCUIT, 32KX8	962
CY7B135-35JC Rochester Electronics	DUAL-PORT SRAM, 4KX8, 35NS,	942
CY62148CV30LL-70BVI Rochester Electronics	STANDARD SRAM, 512KX8, 70NS	10736
CY7C0830AV-167BBC Rochester Electronics	DUAL-PORT SRAM, 64KX18, 4NS	185
CY7C09389V-12AC Rochester Electronics	IC SRAM 1.152MBIT PAR 100TQFP	113
CY7B139-25JC Rochester Electronics	DUAL-PORT SRAM, 4KX9, 25NS,	27
CY7C1383BV25-100BGC Rochester Electronics	STANDARD SRAM, 1MX18, 8.5NS	210
CY7C1041CV33-20VI Rochester Electronics	STANDARD SRAM, 256KX16, 20NS	743
CY62256V-70SNCT Rochester Electronics	STANDARD SRAM, 32KX8, 70NS	6000
CY27C512-90ZC Rochester Electronics	OTP ROM, 64KX8, 90NS PDSO28	217
CY7C1351B-100BGC Rochester Electronics	ZBT SRAM, 128KX36, 8.5NS	359

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)