Memory

Part Number	Description / PDF	Quantity
MT29F2G08ABAEAH4-AATX:E Micron Technology	IC FLASH 2GBIT PARALLEL 63VFBGA	0
S29AS016J70BFI043 Cypress Semiconductor	IC FLASH 16MBIT PARALLEL 48FBGA	0
W29N01HVDINA Winbond Electronics Corporation	IC FLASH 1GBIT PARALLEL 48VFBGA	0
CY7C028V-15AXC Flip Electronics	IC SRAM 1MBIT PARALLEL 100TQFP	657
CY7C1412KV18-250BZXC Cypress Semiconductor	IC SRAM 36MBIT PARALLEL 165FBGA	62
93LC66B-I/P Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8DIP	1055
70T653MS10BC8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 256CABGA	0
CY7C4022KV13-933FCXI Cypress Semiconductor	IC SRAM 72MBIT PARALLEL 361FCBGA	0
24LC16B-M/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT I2C 8SOIC	103
S25FL128SDPBHB303 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 24BGA	0
S25FS128SDSBHI203 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 24BGA	0
MT44K16M36RB-107E:B TR Micron Technology	IC DRAM 576MBIT PARALLEL 168BGA	0
CY27C010-55ZC Rochester Electronics	OTP ROM, 128KX8, 55NS PDSO32	249
CY7C1425KV18-333BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	266
70V658S10BFG8 Renesas Electronics America	IC SRAM 2MBIT PARALLEL 208FPBGA	0
93LC66CT-E/ST Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 3MHZ 8TSSOP	0
M24C32-FMN6TP STMicroelectronics	IC EEPROM 32KBIT I2C 1MHZ 8SO	1785
AS7C4098A-20JINTR Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44SOJ	0
CY7C1625KV18-333BZXC IR (Infineon Technologies)	IC SRAM 144MBIT PARALLEL 165FBGA	168
93AA86C-I/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 3MHZ 8SOIC	604

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)