Memory

Part Number	Description / PDF	Quantity
N25S830HAT22IT Sanyo Semiconductor/ON Semiconductor	IC SRAM 256KBIT SPI 20MHZ 8TSSOP	0
CY62147EV30LL-45ZSXA IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	11251
S70GL02GP11FAIR10 Flip Electronics	IC FLASH 2GBIT PARALLEL 64FBGA	2909
CY7C1061GN30-10ZSXI Flip Electronics	IC SRAM 16MBIT PAR 54TSOP II	218
IS64LPS204818B-166TQLA3 ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 36MBIT PARALLEL 100LQFP	0
AM27S281APC	AM27S281 - OTP ROM, 1KX8, 35NS	212
FM25C160B-GA Flip Electronics	IC FRAM 16KBIT SPI 15MHZ 8SOIC	3154
CY7C1315CV18-200BZC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	407
BRCB008GWZ-3E2 ROHM Semiconductor	IC EEPROM 8K I2C UCSP30L1	5890
S29GL064N90FFI012 Cypress Semiconductor	IC FLASH 64MBIT PARALLEL 64FBGA	0
CY7C1525V18-200BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	51
CY7C1041CV33-20ZSXA IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	2281
M24512-DRDW8TP/K STMicroelectronics	IC EEPROM 512KBIT I2C 8TSSOP	2275
AS7C34098A-20TCN Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44TSOP2	0
STK14C88-5C45M IR (Infineon Technologies)	IC NVSRAM 256KBIT PAR 32CDIP	168
IS25LP080D-JKLE-TR ISSI (Integrated Silicon Solution, Inc.)	IC FLASH 8MBIT SPI/QUAD 8WSON	0
GS8662Q18BGD-357I GSI Technology	IC SRAM 72MBIT PARALLEL 165FPBGA	15
CY7C2564XV18-450BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	241
S29GL512T11FAIV20 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 64FBGA	0
25AA160T/SN Roving Networks / Microchip Technology	IC EEPROM 16KBIT SPI 1MHZ 8SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)