Memory

Part Number	Description / PDF	Quantity
CY7C1011G30-10BAJXE Cypress Semiconductor	IC SRAM 2MBIT PARALLEL 48FBGA	0
CY27C010-150ZC	OTP ROM, 128KX8, 150NS PDSO32	0
71V65703S85BQGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
AS7C256A-15TINTR Alliance Memory, Inc.	IC SRAM 256KBIT PAR 28TSOP I	0
S29GL512T12DHVV20 Cypress Semiconductor	IC FLASH 512MBIT PARALLEL 64FBGA	0
MT58L256L32FS-8.5IT Micron Technology	CACHE SRAM, 256KX32, 8.5NS PQFP1	15
M48Z35-70PC1 STMicroelectronics	IC NVSRAM 256KBIT PAR 28PCDIP	378
71V35761S166PF	IC SRAM 4.5MBIT PARALLEL 100TQFP	566
S27KL0641DABHI023 Cypress Semiconductor	IC PSRAM 64MBIT PARALLEL 24FBGA	0
IS45S16320D-6CTLA1 ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PAR 54TSOP II	0
CY7C1420JV18-300BZC IR (Infineon Technologies)	IC SRAM 36MBIT PARALLEL 165FBGA	0
93LC66AT-I/SN Roving Networks / Microchip Technology	IC EEPROM 4KBIT SPI 2MHZ 8SOIC	3307
24VL024HT/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8SOIC	3044
IS43R86400D-6BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TFBGA	0
M95128-DRMF3TG/K STMicroelectronics	IC EEPROM 128KBIT SPI 20MHZ 8MLP	0
S29GL01GP13TFIV10 Flip Electronics	IC FLASH 1GBIT PARALLEL 56TSOP	20643
CAT93C76BVI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 8KBIT SPI 4MHZ 8SOIC	0
CY62138FLL-45SXIT Cypress Semiconductor	IC SRAM 2MBIT PARALLEL 32SOIC	0
TMS27PC256-17FML Texas Instruments	OTP ROM, 32KX8, 170NS PQCC32	43231
BR24G128FVJ-3AGTE2 ROHM Semiconductor	IC EEPROM 128KBIT I2C 8TSSOP	8

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)