Memory

Part Number	Description / PDF	Quantity
MR25H256CDFR Everspin Technologies, Inc.	IC RAM 256KBIT SPI 40MHZ 8DFN	0
IS42SM16320E-75BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 54TFBGA	0
24LCS52T/SN Roving Networks / Microchip Technology	IC EEPROM 2KBIT I2C 400KHZ 8SOIC	0
MX25U51245GZ4I54 Macronix	IC FLASH 512MBIT SPI/QUAD 8WSON	4126
AT24C128C-MAHM-E Roving Networks / Microchip Technology	IC EEPROM 128KBIT I2C 1MHZ 8UDFN	0
S26KS128SDABHV030 Cypress Semiconductor	IC FLASH 128MBIT PARALLEL 24FBGA	0
W25R128JVPIQ TR Winbond Electronics Corporation	IC FLASH 128MBIT SPI/QUAD 8WSON	0
NM93C46AVM8X	EEPROM, 64X16, SERIAL, CMOS	10457
BR93G56FVT-3GE2 ROHM Semiconductor	IC EEPROM 2KBIT SPI 3MHZ 8TSSOPB	2949
IS43LD32640B-18BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 2GBIT PARALLEL 134TFBGA	0
24AA16T-I/OT Roving Networks / Microchip Technology	IC EEPROM 16KBIT I2C SOT23-5	24192
IS61WV25616BLL-10KLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 4MBIT PARALLEL 44SOJ	0
24FC1026T-I/SN Roving Networks / Microchip Technology	IC EEPROM 1MBIT I2C 1MHZ 8SOIC	537
SST39VF6401B-70-4C-EKE Roving Networks / Microchip Technology	IC FLASH 64MBIT PARALLEL 48TSOP	150
GS8342QT19BGD-333I GSI Technology	IC SRAM 36MBIT PARALLEL 165FPBGA	0
71024S15TYG Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32SOJ	2144
CY7C244-45WC Rochester Electronics	UVPROM, 4KX8, 45NS, CMOS	145
CY7C09159AV-9AXC IR (Infineon Technologies)	IC SRAM 72KBIT PARALLEL 100TQFP	0
CY7C1520KV18-333BZXI IR (Infineon Technologies)	DDR SRAM, 2MX36, 0.45NS PBGA165	55
USBF129T-I/SN Roving Networks / Microchip Technology	IC FLASH 4MBIT SPI 30MHZ 8SOIC	2335

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)