Memory

Part Number	Description / PDF	Quantity
IS61NLP102418B-200TQLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 18MBIT PARALLEL 100LQFP	3
R1LV0816ASA-7SI#B0 Renesas Electronics America	IC SRAM 8MBIT PARALLEL 48TSOP I	396
S25FL127SABBHIS00 IR (Infineon Technologies)	IC FLASH 128MBIT SPI/QUAD 24BGA	0
25LC128T-E/MF Roving Networks / Microchip Technology	IC EEPROM 128KBIT SPI 10MHZ 8DFN	0
71V35761SA183BG Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
MT25QL128ABA8E12-1SIT TR Micron Technology	IC FLASH 128MBIT SPI 24TPBGA	2121
S25FL512SAGBHIC13 Cypress Semiconductor	IC FLASH 512MBIT SPI/QUAD 24BGA	0
IS61LP6436A-133TQLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 2MBIT PARALLEL 100TQFP	0
7130LA100PDG Renesas Electronics America	IC SRAM 8KBIT PARALLEL 48DIP	75
R1LV0216BSB-7SI#B0 Renesas Electronics America	IC SRAM 2MBIT PARALLEL 44TSOP II	3452
AS4C8M16D1-5BCNTR Alliance Memory, Inc.	IC DRAM 128MBIT PARALLEL 60TFBGA	0
S-24C32CI-K8T3U3 ABLIC U.S.A. Inc.	IC EEPROM 32KBIT I2C 8TMSOP	78
29205BXA Intersil (Renesas Electronics America)	STANDARD SRAM, 8KX8, 150NS, CMOS	39
M95128-RDW6TP STMicroelectronics	IC EEPROM 128KBIT SPI 8TSSOP	1693
TE28F400CEB120 Intel	FLASH, 256KX16, 120NS, PDSO48	7160
AS7C513B-15TCN Alliance Memory, Inc.	IC SRAM 512KBIT PARALLEL 44TSOP2	0
SM662PED BDS ST602 Silicon Motion	FERRI EMMC 40GB 3D TLC + EXT. TE	0
71V424L10PHGI8 Renesas Electronics America	IC SRAM 4MBIT PARALLEL 44TSOP II	0
CY7C1360C-200BGC IR (Infineon Technologies)	IC SRAM 9MBIT PARALLEL 119PBGA	0
CY62157DV30LL-45ZSXI Rochester Electronics	STANDARD SRAM, 512KX16, 45NS	1027

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)