| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
IC EEPROM 8KBIT I2C 100KHZ 8DIP |
0 |
|
|
 |
Roving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIJ |
16 |
|
 |
ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
0 |
|
 |
IR (Infineon Technologies) |
IC SRAM 256KBIT PARALLEL 28SOJ |
8036 |
|
 |
ABLIC U.S.A. Inc. |
IC EEPROM 2KBIT I2C 400KHZ 8SOP |
0 |
|
 |
Alliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 54FBGA |
0 |
|
 |
Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
1371 |
|
 |
IR (Infineon Technologies) |
IC SRAM 18MBIT PARALLEL 165FBGA |
1278 |
|
 |
Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
131 |
|
 |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
0 |
|
|
 |
Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
0 |
|
 |
Winbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60TFBGA |
0 |
|
 |
Everspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 48FBGA |
62 |
|
 |
Roving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8USON |
0 |
|
 |
Cypress Semiconductor |
NO WARRANTY |
96 |
|
 |
Roving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
0 |
|
 |
Winbond Electronics Corporation |
IC FLASH 1GBIT PARALLEL 48TSOP |
0 |
|
 |
Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
0 |
|
 |
Alliance Memory, Inc. |
IC FLSH 4MBIT PARALLEL 32PLCC |
14 |
|
 |
Alliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP |
0 |
|
Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| DRAM (Dynamic RAM) | High-density, low-cost, requires periodic refresh | PCs, Servers, Graphics Cards |
| NAND Flash | Non-volatile, high endurance, block-level access | SSDs, USB Drives, Mobile Storage |
| SRAM (Static RAM) | High-speed, low density, no refresh required | Cache Memory, Networking Equipment |
| NOR Flash | Random access, execute-in-place capability | Embedded Systems, Automotive ECUs |
| MRAM (Magnetoresistive RAM) | Non-volatile, unlimited endurance, low power | IoT Devices, Industrial Sensors |
Memory ICs typically consist of:
Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.
| Parameter | Description | Importance |
|---|---|---|
| Storage Capacity | Data volume (Gb/GiB) | Determines system memory limits |
| Access Time | ns/predictable latency | Impacts processing speed |
| Power Consumption | mW/MHz | Affects battery life and thermal design |
| Endurance | P/E cycles (Flash) | Dictates product lifespan |
| Data Retention | Years (non-volatile) | Critical for long-term storage |
| Manufacturer | Representative Products |
|---|---|
| Samsung Electronics | V-NAND (9x-layer), LPDDR5X |
| SK hynix | HBM3 (8GB/s bandwidth), GDDR6 |
| Microchip Technology | Serial NOR Flash (SST26) |
| Kioxia Corporation | BiCS FLASH (3D NAND) |
| Infineon Technologies | MRAM (40nm process) |
Key considerations:
Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.
Future directions include: