Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APT200GT60JR

APT200GT60JR

Roving Networks / Microchip Technology

IGBT MOD 600V 195A 500W SOT227

0

APTGT600A60G

APTGT600A60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 700A 2300W SP6

60

APTGT50DDA120T3G

APTGT50DDA120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 75A 270W SP3

0

APTCV60HM45BC20T3G

APTCV60HM45BC20T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 250W SP3

0

APTGT50SK170T1G

APTGT50SK170T1G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 75A 312W SP1

18

APT200GN60JDQ4

APT200GN60JDQ4

Roving Networks / Microchip Technology

IGBT MOD 600V 283A 682W ISOTOP

17

APT75GT120JU2

APT75GT120JU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 100A 416W SOT227

55

APT60GT60JRDQ3

APT60GT60JRDQ3

Roving Networks / Microchip Technology

IGBT 600V 105A 379W SOT227

0

APT85GR120J

APT85GR120J

Roving Networks / Microchip Technology

IGBT MOD 1200V 116A 543W SOT227

47

APTGT300DU170G

APTGT300DU170G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 400A 1660W SP6

0

APT100GT120JR

APT100GT120JR

Roving Networks / Microchip Technology

IGBT MOD 1200V 123A 570W ISOTOP

0

APTCV60HM45BT3G

APTCV60HM45BT3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 250W SP3

0

APTGT450A60G

APTGT450A60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 550A 1750W SP6

0

APTGT50H120T3G

APTGT50H120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 75A 270W SP3

0

APT40GL120JU2

APT40GL120JU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 65A 220W SOT227

0

APT65GP60J

APT65GP60J

Roving Networks / Microchip Technology

IGBT MOD 600V 130A 431W ISOTOP

10

APTGT150A60T1G

APTGT150A60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 225A 480W SP1

0

APTGT100TL60T3G

APTGT100TL60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 150A 340W SP3

0

APTGL120TA120TPG

APTGL120TA120TPG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 140A 517W SP6P

0

APTGLQ200H120G

APTGLQ200H120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 350A 1000W SP6

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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