Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APT150GN120J

APT150GN120J

Roving Networks / Microchip Technology

IGBT MOD 1200V 215A 625W ISOTOP

11

APT45GP120JDQ2

APT45GP120JDQ2

Roving Networks / Microchip Technology

IGBT MOD 1200V 75A 329W ISOTOP

99

APTGT200A60T3AG

APTGT200A60T3AG

Roving Networks / Microchip Technology

IGBT MODULE 600V 290A 750W SP3

0

APTGL475U120D4G

APTGL475U120D4G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 610A 2082W D4

20

APT60GA60JD60

APT60GA60JD60

Roving Networks / Microchip Technology

IGBT MOD 600V 112A 356W ISOTOP

464

APTGT600U170D4G

APTGT600U170D4G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 1100A 2900W D4

52

APTGT200TL60G

APTGT200TL60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 300A 652W SP6

2

APT60GF120JRDQ3

APT60GF120JRDQ3

Roving Networks / Microchip Technology

IGBT MOD 1200V 149A 625W ISOTOP

10

APTGT150DA60T1G

APTGT150DA60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 225A 480W SP1

0

APT60GF120JRD

APT60GF120JRD

Roving Networks / Microchip Technology

IGBT NPT COMBI 1200V 60A ISOTOP

20

APTGT200DU60TG

APTGT200DU60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 290A 625W SP4

0

APTCV60HM45RCT3G

APTCV60HM45RCT3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 250W SP3

0

APTGT50TL601G

APTGT50TL601G

Roving Networks / Microchip Technology

IGBT MODULE 600V 80A 176W SP1

1

APT75GT120JRDQ3

APT75GT120JRDQ3

Roving Networks / Microchip Technology

IGBT MOD 1200V 97A 480W ISOTOP

9

MSCGL40X120T3AG

MSCGL40X120T3AG

Roving Networks / Microchip Technology

PM-IGBT-TFS-SP3F

30

APT150GT120JR

APT150GT120JR

Roving Networks / Microchip Technology

IGBT MOD 1200V 170A 830W ISOTOP

7

APTGT300TL60G

APTGT300TL60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 400A 935W SP6

0

APTGT400DA60D3G

APTGT400DA60D3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 500A 1250W D3

0

APTGT100A170TG

APTGT100A170TG

Roving Networks / Microchip Technology

IGBT MODULE 1700V 150A 560W SP4

0

APT40GP90J

APT40GP90J

Roving Networks / Microchip Technology

IGBT MODULE 900V 68A 284W ISOTOP

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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