Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGT75DA120TG

APTGT75DA120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 110A 357W SP4

0

APT40GLQ120JCU2

APT40GLQ120JCU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 80A 312W SOT227

0

APTGL180A120T3AG

APTGL180A120T3AG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 230A 940W SP3

0

APT75GP120JDQ3

APT75GP120JDQ3

Roving Networks / Microchip Technology

IGBT MOD 1200V 128A 543W ISOTOP

453

APTGL240TL120G

APTGL240TL120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 305A 1000W SP6

0

APTGT300A170G

APTGT300A170G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 400A 1660W SP6

0

APTGLQ100A120T3AG

APTGLQ100A120T3AG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 185A 650W SP3

0

APTGL60TL120T3G

APTGL60TL120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 80A 280W SP3

0

APT35GT120JU2

APT35GT120JU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 55A 260W SOT227

0

APTGT75A60T1G

APTGT75A60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP1

0

APTGT400DU120G

APTGT400DU120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 560A 1785W SP6

0

APTGT300DU60G

APTGT300DU60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 430A 1150W SP6

0

APT80GP60JDQ3

APT80GP60JDQ3

Roving Networks / Microchip Technology

IGBT 600V 151A 462W SOT227

0

APT150GN60J

APT150GN60J

Roving Networks / Microchip Technology

IGBT MOD 600V 220A 536W ISOTOP

0

APT100GN120J

APT100GN120J

Roving Networks / Microchip Technology

IGBT MOD 1200V 153A 446W ISOTOP

0

APTGLQ80HR120CT3G

APTGLQ80HR120CT3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 150A 500W SP3

0

APTGTQ100H65T3G

APTGTQ100H65T3G

Roving Networks / Microchip Technology

IGBT MODULE 650V 100A 250W SP3F

0

APTGT600DU60G

APTGT600DU60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 700A 2300W SP6

0

APTGT50DDA60T3G

APTGT50DDA60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 80A 176W SP3

0

APTGT50DU120TG

APTGT50DU120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 75A 277W SP4

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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