Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGT400A60D3G

APTGT400A60D3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 500A 1250W D3

7

APTGT75TDU120PG

APTGT75TDU120PG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 100A 350W SP6P

0

APTGT100DU60TG

APTGT100DU60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 150A 340W SP4

0

APT80GP60J

APT80GP60J

Roving Networks / Microchip Technology

IGBT MOD 600V 151A 462W ISOTOP

9

APTGT150DU120TG

APTGT150DU120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 220A 690W SP4

0

APT40GP60JDQ2

APT40GP60JDQ2

Roving Networks / Microchip Technology

IGBT MODULE 600V 86A 284W ISOTOP

0

APTCV60TLM45T3G

APTCV60TLM45T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP3

0

APTGT75DA60T1G

APTGT75DA60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP1

0

APT150GN60JDQ4

APT150GN60JDQ4

Roving Networks / Microchip Technology

IGBT MOD 600V 220A 536W ISOTOP

29

APT150GN120JDQ4

APT150GN120JDQ4

Roving Networks / Microchip Technology

IGBT MOD 1200V 215A 625W ISOTOP

42

APTGT100A60T1G

APTGT100A60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 150A 340W SP1

0

APTGL60DDA120T3G

APTGL60DDA120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 80A 280W SP3

0

APT40GP90JDQ2

APT40GP90JDQ2

Roving Networks / Microchip Technology

IGBT MODULE 900V 64A 284W ISOTOP

0

APTCV60TLM99T3G

APTCV60TLM99T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 90W SP3

0

APTGT50X60T3G

APTGT50X60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 80A 176W SP3

1

APTGT75A120T1G

APTGT75A120T1G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 110A 357W SP1

0

MSCGTQ100HD65C1AG

MSCGTQ100HD65C1AG

Roving Networks / Microchip Technology

PM-IGBT-TFS-SBD~-SP1F

24

APTGT300A60TG

APTGT300A60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 430A 935W SP4

6

APT75GT120JU3

APT75GT120JU3

Roving Networks / Microchip Technology

IGBT MOD 1200V 100A 416W SOT227

0

APTGT600SK60G

APTGT600SK60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 700A 2300W SP6

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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