Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APT50GF120JRD

APT50GF120JRD

Roving Networks / Microchip Technology

IGBT NPT COMBI 1200V 50A ISOTOP

60

APTGT200A120G

APTGT200A120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 280A 890W SP6

24

APT100GT120JU2

APT100GT120JU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 140A 480W SOT227

127

APT50GF120JRDQ3

APT50GF120JRDQ3

Roving Networks / Microchip Technology

IGBT MOD 1200V 120A 521W ISOTOP

0

APTGLQ400A120T6G

APTGLQ400A120T6G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 700A 1900W SP6

0

APTGT100BB60T3G

APTGT100BB60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 150A 340W SP3

0

APT35GT120JU3

APT35GT120JU3

Roving Networks / Microchip Technology

IGBT MOD 1200V 55A 260W SOT227

0

APT100GT60JR

APT100GT60JR

Roving Networks / Microchip Technology

IGBT MOD 600V 148A 500W ISOTOP

20

APT75GN120JDQ3

APT75GN120JDQ3

Roving Networks / Microchip Technology

IGBT MOD 1200V 124A 379W ISOTOP

138

APT100GT60JRDQ4

APT100GT60JRDQ4

Roving Networks / Microchip Technology

IGBT MOD 600V 148A 500W ISOTOP

0

APT100GN120JDQ4

APT100GN120JDQ4

Roving Networks / Microchip Technology

IGBT MOD 1200V 153A 446W ISOTOP

0

APT100GT120JRDQ4

APT100GT120JRDQ4

Roving Networks / Microchip Technology

IGBT MOD 1200V 123A 570W ISOTOP

21

APTGT150SK120G

APTGT150SK120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 220A 690W SP6

0

APT100GLQ65JU2

APT100GLQ65JU2

Roving Networks / Microchip Technology

IGBT MOD 650V 165A 430W ISOTOP

0

APT85GR120JD60

APT85GR120JD60

Roving Networks / Microchip Technology

IGBT MOD 1200V 116A 543W SOT227

28

APTGT75H60T1G

APTGT75H60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP1

0

APTGT100H60T3G

APTGT100H60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 150A 340W SP3

14

APT200GN60J

APT200GN60J

Roving Networks / Microchip Technology

IGBT MOD 600V 283A 682W ISOTOP

123

APT47GA60JD40

APT47GA60JD40

Roving Networks / Microchip Technology

IGBT 600V 87A 283W SOT-227

0

APTGT200DA60T3AG

APTGT200DA60T3AG

Roving Networks / Microchip Technology

IGBT MODULE 600V 290A 750W SP3

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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