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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF450R12ME4PB11BOSA1

FF450R12ME4PB11BOSA1

IR (Infineon Technologies)

FF450R12 - IGBT MODULE

144
FF650R17IE4DPB2BOSA1

FF650R17IE4DPB2BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 650A

0
FP150R12KT4BPSA1

FP150R12KT4BPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 150A

10
FP15R12KE3GBOSA1

FP15R12KE3GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 105W

9
FF300R17ME4PB11BPSA1

FF300R17ME4PB11BPSA1

IR (Infineon Technologies)

FF300R17 - IGBT MODULE

21
FD600R06ME3S2BOSA1

FD600R06ME3S2BOSA1

IR (Infineon Technologies)

IGBT MOD 600V 600A 2250W

0
FF300R12KT4HOSA1

FF300R12KT4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 450A 1600W

58
6MS20017E43W37032NOSA1

6MS20017E43W37032NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0
FS200R07N3E4RB11BOSA1

FS200R07N3E4RB11BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 200A 600W

0
FP25R12W2T4PB11BPSA1

FP25R12W2T4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A 20MW

0
FZ600R17KE3HOSA1

FZ600R17KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 840A 3150W

56
2LS20017E42W40403NOSA1

2LS20017E42W40403NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 20A

0
FS50R12W1T7B11BOMA1

FS50R12W1T7B11BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

24
FD300R12KS4HOSA1

FD300R12KS4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 370A 1950W

0
FS35R12W1T4BOMA1

FS35R12W1T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 65A 225W

119
FP75R12KT4B11BOSA1

FP75R12KT4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 385W

66
FF450R17ME3BOSA1

FF450R17ME3BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 605A 2250W

0
FZ800R33KF2CNOSA1

FZ800R33KF2CNOSA1

IR (Infineon Technologies)

IGBT MOD 3300V 1300A 9600W

0
FF1000R17IE4DPB2BOSA1

FF1000R17IE4DPB2BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1000A

0
FF225R12ME4PBPSA1

FF225R12ME4PBPSA1

IR (Infineon Technologies)

IGBT MODULE

41

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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