ample-chip ample-chip
RFQ
BOM

Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS900R08A2P2B31BOSA1

FS900R08A2P2B31BOSA1

IR (Infineon Technologies)

IGBT MODULE PACK2 DRV HYBRID2-1

0
F4100R17N3E4BPSA1

F4100R17N3E4BPSA1

IR (Infineon Technologies)

LOW POWER ECONO

0
FD900R12IP4DBOSA1

FD900R12IP4DBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 900A 5100W

0
FF450R12IE4BOSA2

FF450R12IE4BOSA2

IR (Infineon Technologies)

IGBT MOD 1200V 450A 2550W

0
FF300R17ME3BOSA1

FF300R17ME3BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 375A 1650W

0
FF200R17KE3S4HOSA1

FF200R17KE3S4HOSA1

IR (Infineon Technologies)

IGBT MODULE VCES 1200V 200A

0
F3L300R12ME4B23BOSA1

F3L300R12ME4B23BOSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

40
FS30R06VE3BOMA1

FS30R06VE3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 34A 88W

0
FP30R06KE3BOSA1

FP30R06KE3BOSA1

IR (Infineon Technologies)

FP30R06 - IGBT MODULE

14
FS50R07N2E4B11BOSA1

FS50R07N2E4B11BOSA1

IR (Infineon Technologies)

IGBT MODULE

61
F4200R17N3E4BPSA1

F4200R17N3E4BPSA1

IR (Infineon Technologies)

IGBT MOD 1700V 200A 20MW

0
FS50R06YE3BOMA1

FS50R06YE3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 60A 160W

0
FF1500R12IE5BPSA1

FF1500R12IE5BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1500A 20MW

2
FF600R17ME4PBOSA1

FF600R17ME4PBOSA1

IR (Infineon Technologies)

IGBT MODULE VCES 600V 600A

0
FP100R12KT4PB11BPSA1

FP100R12KT4PB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR ECONO3-3

0
FZ1600R17KE3NOSA1

FZ1600R17KE3NOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 2300A 8950W

4
F3L300R12PT4PB26BOSA1

F3L300R12PT4PB26BOSA1

IR (Infineon Technologies)

IGBT MODULE MED POWER ECONO4-1

0
FP35R12W2T4PB11BPSA1

FP35R12W2T4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 70A 20MW

34
FP15R12KS4CBOSA1

FP15R12KS4CBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 30A 180W

0
FS200R12PT4BOSA1

FS200R12PT4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 280A 1000W

9

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
RFQ BOM Call Skype Email
Top