Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS450R17KE3BOSA1

FS450R17KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 605A 2250W

0

FF150R12MS4GBOSA1

FF150R12MS4GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 225A 1250W

0

DF1400R12IP4DBOSA1

DF1400R12IP4DBOSA1

IR (Infineon Technologies)

DFXR12F - IGBT MODULE

88

FZ900R12KE4HOSA1

FZ900R12KE4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 900A 4300W

39

FD800R17HP4KB2BOSA2

FD800R17HP4KB2BOSA2

IR (Infineon Technologies)

FD800R17 - IGBT MODULE

170

F450R12KS4B11BOSA1

F450R12KS4B11BOSA1

IR (Infineon Technologies)

F450R12 - IGBT MODULE

10

FS150R07PE4BOSA1

FS150R07PE4BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 150A 430W

0

BYM600A170DN2HOSA1

BYM600A170DN2HOSA1

IR (Infineon Technologies)

IGBT MODULE 1400W MED PWR 62MM-2

0

IFF300B12N2E4PB11BPSA1

IFF300B12N2E4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 20MW

0

FF300R12ME4BOSA1

FF300R12ME4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 450A 1600W

1

FS660R08A6P2FLBBPSA1

FS660R08A6P2FLBBPSA1

IR (Infineon Technologies)

HYBRID PACK DRIVE

0

FZ2400R12HE4PB9HPSA1

FZ2400R12HE4PB9HPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 2400A

0

FS150R12KE3GBOSA1

FS150R12KE3GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 200A 695W

0

FF450R06ME3BOSA1

FF450R06ME3BOSA1

IR (Infineon Technologies)

IGBT MOD 600V 550A 1250W

0

FF1800R17IP5PBPSA1

FF1800R17IP5PBPSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 3600A

6

FF300R17ME4PBPSA1

FF300R17ME4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1700V 600A 20MW

0

FP50R06W2E3B11BOMA1

FP50R06W2E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 65A 175W

0

FP50R07N2E4B11BOSA1

FP50R07N2E4B11BOSA1

IR (Infineon Technologies)

FP50R07 - IGBT MODULE

10

FS30R06W1E3BOMA1

FS30R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 60A 150W

0

DF150R12W1H3FB11BOMA1

DF150R12W1H3FB11BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

24

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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