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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS100R12PT4BOSA1

FS100R12PT4BOSA1

IR (Infineon Technologies)

FS100R12 - IGBT MODULE

2
DDB6U75N16W1RB11BOMA1

DDB6U75N16W1RB11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 69A 335W

0
FS150R07N3E4BOSA1

FS150R07N3E4BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 150A 430W

0
FS10R12VT3BOMA1

FS10R12VT3BOMA1

IR (Infineon Technologies)

IGBT MODULE

120
FD650R17IE4BOSA2

FD650R17IE4BOSA2

IR (Infineon Technologies)

IGBT MOD 1700V 930A 4150W

0
FF100R12RT4HOSA1

FF100R12RT4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 555W

10
FS100R17KS4F

FS100R17KS4F

IR (Infineon Technologies)

IGBT MOD 1700V 100A 960W

0
F3L300R12ME4B22BOSA1

F3L300R12ME4B22BOSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

635
FP100R06KE3_B16

FP100R06KE3_B16

IR (Infineon Technologies)

IGBT MODULE

186
FF900R12IE4PBOSA1

FF900R12IE4PBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 900A 20MW

0
F43L50R07W2H3FB11BPSA2

F43L50R07W2H3FB11BPSA2

IR (Infineon Technologies)

IGBT MOD 650V 50A 20MW

15
DF100R07W1H5FPB53BPSA2

DF100R07W1H5FPB53BPSA2

IR (Infineon Technologies)

IGBT MOD 650V 40A 20MW

30
DF120R12W2H3B27BOMA1

DF120R12W2H3B27BOMA1

IR (Infineon Technologies)

DF120R12W - IGBT MODULE

896
FD1000R33HE3KBPSA1

FD1000R33HE3KBPSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 1000A

0
FF900R12IP4DBOSA2

FF900R12IP4DBOSA2

IR (Infineon Technologies)

IGBT MOD 1200V 900A 5100W

0
FP20R06W1E3B11BOMA1

FP20R06W1E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 27A 94W

0
FS75R12KS4BOSA1

FS75R12KS4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 500W

0
FS300R12KE3BOSA1

FS300R12KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 500A 1450W

9
6MS24017E33W32859NOSA1

6MS24017E33W32859NOSA1

IR (Infineon Technologies)

IGBT MODULE 9980W STACK A-MS3-1

0
FF450R17ME4PB11BOSA1

FF450R17ME4PB11BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 450A

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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