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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FZ1800R12HE4B9HOSA2

FZ1800R12HE4B9HOSA2

IR (Infineon Technologies)

IGBT MODULE 1200V 2735A

0
FZ400R12KE4HOSA1

FZ400R12KE4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 400A 2400W

100
FF300R12KE4HOSA1

FF300R12KE4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 460A 1600W

37
FF400R17KE4EHOSA1

FF400R17KE4EHOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 400A

10
FF600R12IP4BOSA1

FF600R12IP4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 3350W

11
FZ300R12KE3GHOSA1

FZ300R12KE3GHOSA1

IR (Infineon Technologies)

FZ300R12 - IGBT MODULE

20
FS100R12KT4GB11BOSA1

FS100R12KT4GB11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 515W

0
F3L75R12W1H3B27BOMA1

F3L75R12W1H3B27BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 45A 275W

22
6MS30017E43W40372NOSA1

6MS30017E43W40372NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1800A

0
FF450R12KT4HOSA1

FF450R12KT4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 580A 2400W

26
FP06R12W1T4B3BOMA1

FP06R12W1T4B3BOMA1

IR (Infineon Technologies)

FP06R12 - IGBT MODULE

24
DF400R12KE3HOSA1

DF400R12KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 580A 2000W

0
F3L200R12W2H3B11BPSA1

F3L200R12W2H3B11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 600W

6
DDB6U180N16RRB11BPSA1

DDB6U180N16RRB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 140A 515W

0
FS300R12OE4PNOSA1

FS300R12OE4PNOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 20MW

0
FS100R07PE4BOSA1

FS100R07PE4BOSA1

IR (Infineon Technologies)

FS100R07 - IGBT MODULE

157
FD400R12KE3B5HOSA1

FD400R12KE3B5HOSA1

IR (Infineon Technologies)

FD400R12 - IGBT MODULE

330
FZ600R12KE3HOSA1

FZ600R12KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 900A 2800W

37
FF200R12MT4

FF200R12MT4

IR (Infineon Technologies)

IGBT MODULE

6
FS100R12W2T7B11BOMA1

FS100R12W2T7B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 20MW EASY

20

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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