ample-chip ample-chip
RFQ
BOM

Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP15R12W1T4B11BOMA1

FP15R12W1T4B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 28A 130W

24
IFF450B12ME4S8PB11BPSA1

IFF450B12ME4S8PB11BPSA1

IR (Infineon Technologies)

IFF450B12 - IGBT MODULE

422
FS150R12KT4BOSA1

FS150R12KT4BOSA1

IR (Infineon Technologies)

FS150R12 - IGBT MODULE

44
FS15R12YT3BOMA1

FS15R12YT3BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 110W

0
FS25R12W1T7B11BOMA1

FS25R12W1T7B11BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

22
FP25R12KT3BOSA1

FP25R12KT3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 40A 155W

4
FD400R12KE3HOSA1

FD400R12KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 580A 2000W

0
FP25R12W2T4PBPSA1

FP25R12W2T4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A 20MW

9
FF450R12ME4EB11BPSA1

FF450R12ME4EB11BPSA1

IR (Infineon Technologies)

MOD IGBT MED PWR ECONOD-4

6
FS75R07N2E4B11BOSA1

FS75R07N2E4B11BOSA1

IR (Infineon Technologies)

FS75R07 - IGBT MODULE

2
FP30R06W1E3BOMA1

FP30R06W1E3BOMA1

IR (Infineon Technologies)

FP30R06 - IGBT MODULE

28
FZ800R33KF2CS1NDSA1

FZ800R33KF2CS1NDSA1

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

12
FS200R12KT4RPB11BPSA1

FS200R12KT4RPB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR ECONO3-4

0
2PS18012E44G38553NOSA1

2PS18012E44G38553NOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 2560A 5600W

0
FP25R12KS4CBOSA1

FP25R12KS4CBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 40A 230W

0
FS75R06KE3BOSA1

FS75R06KE3BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 75A 250W

0
FZ800R12KE3HOSA1

FZ800R12KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 800A 3550W

10
FP25R12KT4B11BOSA1

FP25R12KT4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 160W

0
FF1200R17KP4B2NOSA2

FF1200R17KP4B2NOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0
FP100R12KT4BOSA1

FP100R12KT4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 515W

9

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
RFQ BOM Call Skype Email
Top