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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FZ1200R17HP4HOSA2

FZ1200R17HP4HOSA2

IR (Infineon Technologies)

IGBT MOD 1700V 1200A 7800W

0
FS820R08A6P2LBBPSA1

FS820R08A6P2LBBPSA1

IR (Infineon Technologies)

IGBT MODULE 820A HYBRID PK DRIVE

0
FS200R12PT4PBOSA1

FS200R12PT4PBOSA1

IR (Infineon Technologies)

FS200R12 - IGBT MODULE

78
DF900R12IP4DVBOSA1

DF900R12IP4DVBOSA1

IR (Infineon Technologies)

DF900R12IP4DV - 1200 V PRIMEPACK

6
FF600R12KE4EBOSA1

FF600R12KE4EBOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 600A

10
BSM35GP120BOSA1

BSM35GP120BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 45A 230W

10
FS10R06VE3BOMA1

FS10R06VE3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 16A 50W

0
FF1200R12IE5BPSA1

FF1200R12IE5BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 2400A 20MW

3
FF225R17ME4B11BOSA1

FF225R17ME4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 340A 1500W

0
FP50R06W2E3BOMA1

FP50R06W2E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 65A 175W

1
FF150R12KS4HOSA1

FF150R12KS4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 225A 1250W

4
FS450R12OE4BOSA1

FS450R12OE4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 660A 2250W

12
FS225R17OE4PBOSA1

FS225R17OE4PBOSA1

IR (Infineon Technologies)

IGBT MODULE

40
DF900R12IP4DBOSA1

DF900R12IP4DBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 900A 5100W

0
FZ1600R17HP4HOSA2

FZ1600R17HP4HOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 1600A

0
FD250R65KE3KNOSA1

FD250R65KE3KNOSA1

IR (Infineon Technologies)

IGBT MOD 6500V 250A 4800W

0
FF600R12ME4PB11BOSA1

FF600R12ME4PB11BOSA1

IR (Infineon Technologies)

IGBT MODULE VCES 600V 600A

0
FD600R17KE3B2NOSA1

FD600R17KE3B2NOSA1

IR (Infineon Technologies)

FD600R17 - IGBT MODULE

140
FP10R12W1T4B11BOMA1

FP10R12W1T4B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 20A 105W

20
FS50R06W1E3BOMA1

FS50R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 70A 205W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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