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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP30R06YE3B4BOMA1

FP30R06YE3B4BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR EASY2-1

0
FS100R12N2T4PBPSA1

FS100R12N2T4PBPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER ECONO

0
FF75R12RT4HOSA1

FF75R12RT4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 395W

1
FF900R12IP4BOSA2

FF900R12IP4BOSA2

IR (Infineon Technologies)

IGBT MOD 1200V 900A 5100W

6
FS900R08A2P2B32BOSA1

FS900R08A2P2B32BOSA1

IR (Infineon Technologies)

IGBT MODULE PACK2 DRV HYBRID2-1

0
FS150R07N3E4B11BOSA1

FS150R07N3E4B11BOSA1

IR (Infineon Technologies)

IGBT MODULE

37
FZ3600R17HE4HOSA2

FZ3600R17HE4HOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 7200A

0
FD450R12KE4PHOSA1

FD450R12KE4PHOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 450A AG62MM-1

24
FF1200R17IP5BPSA1

FF1200R17IP5BPSA1

IR (Infineon Technologies)

IGBT MOD 1700V 1200A 20MW

6
FZ1800R17HE4B9HOSA2

FZ1800R17HE4B9HOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 1800A

0
FF1800R17IP5BPSA1

FF1800R17IP5BPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 300A

4
FS20R06VE3B2BOMA1

FS20R06VE3B2BOMA1

IR (Infineon Technologies)

IGBT MOD 600V 25A 71.5W

0
FF100R12KS4HOSA1

FF100R12KS4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 780W

10
FP50R07U1E4BPSA1

FP50R07U1E4BPSA1

IR (Infineon Technologies)

IGBT, 75A, 650V, N-CHANNEL

240
F3L150R07W2E3B11BOMA1

F3L150R07W2E3B11BOMA1

IR (Infineon Technologies)

IGBT MOD 650V 150A 335W

13
FS15R06VE3B2BOMA1

FS15R06VE3B2BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 22A 65W

0
FS150R12KT4PB11BPSA1

FS150R12KT4PB11BPSA1

IR (Infineon Technologies)

MOD IGBT LOW PWR ECONO3-4

0
DF300R07PE4B6BOSA1

DF300R07PE4B6BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 300A 940W

0
FP15R12W1T7B3BOMA1

FP15R12W1T7B3BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

19
FZ3600R12HP4HOSA2

FZ3600R12HP4HOSA2

IR (Infineon Technologies)

IGBT MODULE 1200V 4930A

1

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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