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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF900R12IP4VBOSA1

FF900R12IP4VBOSA1

IR (Infineon Technologies)

FF900R12 - INSULATED GATE BIPOLA

0
FD1200R17HP4KB2BOSA2

FD1200R17HP4KB2BOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0
FZ800R45KL3B5NOSA2

FZ800R45KL3B5NOSA2

IR (Infineon Technologies)

FZ800R45 - IGBT MODULE

54
FD200R12KE3HOSA1

FD200R12KE3HOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1050W

40
FS15R06XE3BOMA1

FS15R06XE3BOMA1

IR (Infineon Technologies)

IGBT MOD 600V 22A 71.5W

0
FP25R12KT4BOSA1

FP25R12KT4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 160W

0
FP150R07N3E4BOSA1

FP150R07N3E4BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 150A 430W

0
FF300R17ME4B11BOSA1

FF300R17ME4B11BOSA1

IR (Infineon Technologies)

FF300R17 - IGBT MODULE

10
FS820R08A6P2BPSA1

FS820R08A6P2BPSA1

IR (Infineon Technologies)

IGBT MODULE PACK DRV HYBRIDD-1

0
F3L400R10W3S7FB11BPSA1

F3L400R10W3S7FB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

0
FB20R06W1E3BOMA1

FB20R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 29A 94W

0
FF200R33KF2CNOSA1

FF200R33KF2CNOSA1

IR (Infineon Technologies)

IGBT MODULE

9
FS50R06W1E3B11BOMA1

FS50R06W1E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 70A 205W

0
FS150R17N3E4B11BOSA1

FS150R17N3E4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 150A 835W

0
F3L300R07PE4PBOSA1

F3L300R07PE4PBOSA1

IR (Infineon Technologies)

IGBT MOD 650V 300A 20MW

0
6MS30017E43W34404NOSA1

6MS30017E43W34404NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 4280A

0
FF300R12KT3EHOSA1

FF300R12KT3EHOSA1

IR (Infineon Technologies)

FF300R12 - IGBT MODULE

46
FS50R12KT3BOSA1

FS50R12KT3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 280W

9
FP40R12KE3BOSA1

FP40R12KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 55A 210W

10
FZ2400R17HP4B28BOSA2

FZ2400R17HP4B28BOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 4800A

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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