Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
FZ800R12KE3HOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 800A 3550W	10
APTGT75H60T1G Roving Networks / Microchip Technology	IGBT MODULE 600V 100A 250W SP1	0
FP25R12KT4B11BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 25A 160W	0
FF1200R17KP4B2NOSA2 IR (Infineon Technologies)	IGBT MODULE 1700V 1200A	0
FP100R12KT4BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 100A 515W	9
F3L11MR12W2M1B65BOMA1 IR (Infineon Technologies)	LOW POWER EASY	0
MUBW10-06A7 Wickmann / Littelfuse	IGBT MODULE 600V 20A 85W E2	0
DF160R12W2H3FB11BPSA1 IR (Infineon Technologies)	IGBT MOD 1200V 40A 20MW	0
FS50R12KT4B15BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 50A 280W	10
CPV363M4U Vishay General Semiconductor – Diodes Division	IGBT MODULE 600V 13A 36W IMS-2	0
FP7G50US60	IGBT	2076
FF200R12MT4BOMA1 IR (Infineon Technologies)	IGBT MODULE	0
2PS18012E44G40113NOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 2560A 5600W	0
A1P25S12M3 STMicroelectronics	IGBT MOD 1200V 25A 197W ACEPACK1	0
FF400R12KT3PEHOSA1 IR (Infineon Technologies)	FF400R12 - IGBT MODULE	88
F4150R17ME4B11BPSA1 IR (Infineon Technologies)	IGBT MODULE 1700V 230A	0
MG12100S-BN2MM Wickmann / Littelfuse	IGBT MODULE 1200V 140A 450W S3	21
FZ800R12KS4B2NOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 1200A 7600W	0
FS100R17PE4BOSA1 IR (Infineon Technologies)	FS100R17 - IGBT MODULE	163
FP25R12W2T7B11BPSA1 IR (Infineon Technologies)	LOW POWER EASY	45

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability