Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF300R12KT3HOSA1

FF300R12KT3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 480A 1450W

5

FF600R12IE4VBOSA1

FF600R12IE4VBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 3350W

0

FZ1400R33HE4BPSA1

FZ1400R33HE4BPSA1

IR (Infineon Technologies)

IGBT MODULE DIODE HVB130-3

2

FD200R12KE3PHOSA1

FD200R12KE3PHOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 200A

0

FS450R17OP4PBOSA1

FS450R17OP4PBOSA1

IR (Infineon Technologies)

MEDIUM POWER ECONO

0

FF150R12RT4HOSA1

FF150R12RT4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 790W

0

FP7G75US60

FP7G75US60

IGBT

2912

VS-ETL015Y120H

VS-ETL015Y120H

Vishay General Semiconductor – Diodes Division

IGBT MOD 1200V 22A 89W EMIPAK-2B

0

FF300R12KT4PHOSA1

FF300R12KT4PHOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 300A

0

FS150R17KE3GBOSA1

FS150R17KE3GBOSA1

IR (Infineon Technologies)

IGBT MODULE

249

FD800R33KF2CNOSA1

FD800R33KF2CNOSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 9600W

0

DF650R17IE4BOSA1

DF650R17IE4BOSA1

IR (Infineon Technologies)

DFXR17F - IGBT MODULE

39

IXXN110N65C4H1

IXXN110N65C4H1

Wickmann / Littelfuse

IGBT MOD 650V 210A 750W SOT227B

300

FF450R12KT4PHOSA1

FF450R12KT4PHOSA1

IR (Infineon Technologies)

FF450R12 - IGBT MODULE

16

FD300R07PE4B6BOSA1

FD300R07PE4B6BOSA1

IR (Infineon Technologies)

FD300R07 - IGBT MODULE

132

2PS13512E43W39689NOSA1

2PS13512E43W39689NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 900A

0

FS75R12W2T4BOMA1

FS75R12W2T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 107A 375W

12

APT25GLQ120JCU2

APT25GLQ120JCU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 45A 170W SOT227

0

FP35R12KT4B15BOSA1

FP35R12KT4B15BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 35A 210W

9

FS200R07PE4BOSA1

FS200R07PE4BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 200A 600W

4

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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