Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
2LS20017E42W36702NOSA1 IR (Infineon Technologies)	IGBT MODULE 1700V 20A	0
FS150R12KT4B11BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 150A 750W	0
FF600R12IE4BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 600A 3350W	21
APT100GLQ65JU3 Roving Networks / Microchip Technology	IGBT 600V 100A 430W ISOTOP	0
FF600R12ME4CBOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 1060A 4050W	20
APTGT200DU120G Roving Networks / Microchip Technology	IGBT MODULE 1200V 280A 890W SP6	62
GSID300A120S5C1 SemiQ	IGBT MOD 1200V 430A 1630W	1
GSID300A125S5C1 SemiQ	IGBT MOD 1250V 600A 2500W	2
APTGT50A120T1G Roving Networks / Microchip Technology	IGBT MODULE 1200V 75A 277W SP1	0
FZ1000R33HL3BPSA1 IR (Infineon Technologies)	FZ1000R33 - IGBT MODULE	2
APTCV60HM45RT3G Roving Networks / Microchip Technology	IGBT MODULE 600V 50A 250W SP3	0
FF6MR12W2M1PB11BPSA1 IR (Infineon Technologies)	IGBT MODULE LOW POWER EASY	22
A2C35S12M3 STMicroelectronics	IGBT MOD 1200V 35A 250W ACEPACK2	1
APT45GP120J Roving Networks / Microchip Technology	IGBT MOD 1200V 75A 329W ISOTOP	0
FD150R12RT4HOSA1 IR (Infineon Technologies)	FD150R12 - IGBT MODULE	0
FF200R06KE3HOSA1 IR (Infineon Technologies)	IGBT MOD 600V 260A 680W	15
APT40GL120JU3 Roving Networks / Microchip Technology	IGBT MOD 1200V 65A 220W SOT227	0
FF225R17ME4PBPSA1 IR (Infineon Technologies)	IGBT MOD 1700V 450A 20MW	0
2PS13512E43W35222NOSA1 IR (Infineon Technologies)	MODULE IGBT STACK A-PS3-1	0
FZ1800R17HP4B9HOSA2 IR (Infineon Technologies)	FZ1800R17 - IGBT MODULE	42

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability