Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
F4100R12KS4BOSA1

F4100R12KS4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 130A 660W

0

APTGT150DA60T1G

APTGT150DA60T1G

Roving Networks / Microchip Technology

IGBT MODULE 600V 225A 480W SP1

0

F3L300R12MT4PB23BPSA1

F3L300R12MT4PB23BPSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

21

FZ600R17KE3S4HOSA1

FZ600R17KE3S4HOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 1200A 3150W

0

FP10R06W1E3BOMA1

FP10R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 16A 68W

13

APT60GF120JRD

APT60GF120JRD

Roving Networks / Microchip Technology

IGBT NPT COMBI 1200V 60A ISOTOP

20

APTGT200DU60TG

APTGT200DU60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 290A 625W SP4

0

FZ1200R12HE4PHPSA1

FZ1200R12HE4PHPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1825A

0

FS500R17OE4DB81BPSA1

FS500R17OE4DB81BPSA1

IR (Infineon Technologies)

MEDIUM POWER ECONO

4

FS200R07A5E3S6BPSA1

FS200R07A5E3S6BPSA1

IR (Infineon Technologies)

IGBT MODULE HYBRID PACK LIGHT

0

FS150R12KT4PBPSA1

FS150R12KT4PBPSA1

IR (Infineon Technologies)

IGBT MODULE

156

IFF300B17N2E4PB11BPSA1

IFF300B17N2E4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1700V 400A 1500W

0

FP150R07N3E4B11BOSA1

FP150R07N3E4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 150A 430W

0

FF300R12ME3BOSA1

FF300R12ME3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 500A 1450W

0

FP50R07N2E4BOSA1

FP50R07N2E4BOSA1

IR (Infineon Technologies)

IGBT MODULE 650V 70A

0

APTCV60HM45RCT3G

APTCV60HM45RCT3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 250W SP3

0

APTGT50TL601G

APTGT50TL601G

Roving Networks / Microchip Technology

IGBT MODULE 600V 80A 176W SP1

1

FS200R12KT4RPBPSA1

FS200R12KT4RPBPSA1

IR (Infineon Technologies)

IGBT MODULE

30

CM200EXS-34SA

CM200EXS-34SA

Powerex, Inc.

IGBT MOD 1700V 200A 2000W

2

FZ2400R17HE4PB9HPSA1

FZ2400R17HE4PB9HPSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 2400A

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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