Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGT200A60T3AG

APTGT200A60T3AG

Roving Networks / Microchip Technology

IGBT MODULE 600V 290A 750W SP3

0

FF300R17ME4BOSA1

FF300R17ME4BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 375A 1800W

10

APTGL475U120D4G

APTGL475U120D4G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 610A 2082W D4

20

APT60GA60JD60

APT60GA60JD60

Roving Networks / Microchip Technology

IGBT MOD 600V 112A 356W ISOTOP

464

FZ1000R33HE3BPSA1

FZ1000R33HE3BPSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 1000A

2

FS75R12KT4B11BOSA1

FS75R12KT4B11BOSA1

IR (Infineon Technologies)

FS75R12 - IGBT MODULE

20

APTGT600U170D4G

APTGT600U170D4G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 1100A 2900W D4

52

DD800S45KL3B5NPSA1

DD800S45KL3B5NPSA1

IR (Infineon Technologies)

IGBT MOD 4500V 800A 1600W

0

APTGT200TL60G

APTGT200TL60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 300A 652W SP6

2

FF23MR12W1M1PB11BPSA1

FF23MR12W1M1PB11BPSA1

IR (Infineon Technologies)

LOW POWER EASY

0

FD900R12IP4DVBOSA1

FD900R12IP4DVBOSA1

IR (Infineon Technologies)

FD900R12 - INSULATED GATE BIPOLA

3

FF450R12ME4BOSA1

FF450R12ME4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 675A 2250W

1

DF1000R17IE4PBPSA1

DF1000R17IE4PBPSA1

IR (Infineon Technologies)

PP IHM I XHP 1 7KV

0

FP100R07N3E4B11BOSA1

FP100R07N3E4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 100A 335W

0

FZ3600R17HP4HOSA2

FZ3600R17HP4HOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 3600A

0

FF150R12ME3GBOSA1

FF150R12ME3GBOSA1

IR (Infineon Technologies)

IGBT MODULE

220

APT60GF120JRDQ3

APT60GF120JRDQ3

Roving Networks / Microchip Technology

IGBT MOD 1200V 149A 625W ISOTOP

10

FS100R17KE3BOSA1

FS100R17KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 145A 555W

0

FS400R07A1E3S7BOMA1

FS400R07A1E3S7BOMA1

IR (Infineon Technologies)

IGBT MODULE

0

IXYN100N65C3H1

IXYN100N65C3H1

Wickmann / Littelfuse

IGBT MOD 650V 166A 600W SOT227B

1397

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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