Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
FMG2G75US60	IGBT, 75A, 600V, N-CHANNEL	111
FS150R07N3E4_B11 IR (Infineon Technologies)	IGBT MODULE	160
FP75R12N2T4B11BPSA1 IR (Infineon Technologies)	IGBT MODULE	404
VS-GT140DA60U Vishay General Semiconductor – Diodes Division	IGBT MOD 600V 200A 652W SOT227	0
F3L200R07W2S5FB11BOMA1 IR (Infineon Technologies)	IGBT MODULE LOW POWER EASY	15
APTGT400DA60D3G Roving Networks / Microchip Technology	IGBT MODULE 600V 500A 1250W D3	0
FZ1200R33HE3BPSA1 IR (Infineon Technologies)	IGBT MODULE 3300V 1200A	0
FS200R12KT4RBOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 280A 1000W	21
F3L15MR12W2M1B69BOMA1 IR (Infineon Technologies)	LOW POWER EASY	0
VS-GT180DA120U Vishay General Semiconductor – Diodes Division	IGBT MOD 1200V 281A 1087W SOT227	55
FS400R07A3E3BOMA1 IR (Infineon Technologies)	IGBT MODULE	0
FS20R06W1E3BOMA1 IR (Infineon Technologies)	IGBT MODULE 600V 35A 135W	0
FZ1200R12HE4HOSA2 IR (Infineon Technologies)	IGBT MODULE 1200V 1200A	0
FZ600R65KE3NOSA1 IR (Infineon Technologies)	IGBT MOD 6500V 1200A 2400W	0
APTGT100A170TG Roving Networks / Microchip Technology	IGBT MODULE 1700V 150A 560W SP4	0
APT40GP90J Roving Networks / Microchip Technology	IGBT MODULE 900V 68A 284W ISOTOP	0
GSID080A120B1A5 SemiQ	IGBT MOD 1200V 160A 1710W	0
F475R07W1H3B11ABOMA1 IR (Infineon Technologies)	F475R07 - AUTOMOTIVE IGBT MODULE	7
FF600R12ME4PBOSA1 IR (Infineon Technologies)	IGBT MODULE VCES 600V 600A	0
FZ800R12KL4CNOSA1 IR (Infineon Technologies)	IGBT MODULE	102

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability