Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTCV60HM45BT3G

APTCV60HM45BT3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 50A 250W SP3

0

IXGN82N120B3H1

IXGN82N120B3H1

Wickmann / Littelfuse

IGBT MOD 1200V 145A 595W SOT227B

0

FF1800R17IP5PBPSA1

FF1800R17IP5PBPSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 3600A

6

CPV362M4U

CPV362M4U

Vishay General Semiconductor – Diodes Division

IGBT MODULE 600V 7.2A 23W IMS-2

0

FF300R17ME4PBPSA1

FF300R17ME4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1700V 600A 20MW

0

FP50R06W2E3B11BOMA1

FP50R06W2E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 65A 175W

0

FP50R07N2E4B11BOSA1

FP50R07N2E4B11BOSA1

IR (Infineon Technologies)

FP50R07 - IGBT MODULE

10

FS30R06W1E3BOMA1

FS30R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 60A 150W

0

FP7G100US60

FP7G100US60

IGBT, 100A, 600V, N-CHANNEL

3236

APTGT450A60G

APTGT450A60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 550A 1750W SP6

0

DF150R12W1H3FB11BOMA1

DF150R12W1H3FB11BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

24

FF450R12ME4PB11BOSA1

FF450R12ME4PB11BOSA1

IR (Infineon Technologies)

FF450R12 - IGBT MODULE

144

MG12200D-BN2MM

MG12200D-BN2MM

Wickmann / Littelfuse

IGBT MODULE 1200V 290A 1050W D3

0

FF650R17IE4DPB2BOSA1

FF650R17IE4DPB2BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 650A

0

FP150R12KT4BPSA1

FP150R12KT4BPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 150A

10

FP15R12KE3GBOSA1

FP15R12KE3GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 105W

9

MG12300WB-BN2MM

MG12300WB-BN2MM

Wickmann / Littelfuse

IGBT MODULE 1200V 500A 1400W WB

0

APTGT50H120T3G

APTGT50H120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 75A 270W SP3

0

APT40GL120JU2

APT40GL120JU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 65A 220W SOT227

0

FF300R17ME4PB11BPSA1

FF300R17ME4PB11BPSA1

IR (Infineon Technologies)

FF300R17 - IGBT MODULE

21

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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