Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
APT85GR120J Roving Networks / Microchip Technology	IGBT MOD 1200V 116A 543W SOT227	47
FMG1G50US60L	IGBT, 50A, 600V, N-CHANNEL	46
MG1225H-XBN2MM Wickmann / Littelfuse	IGBT MOD 1200V 25A 105W	0
DF1400R12IP4DBOSA1 IR (Infineon Technologies)	DFXR12F - IGBT MODULE	88
APTGT300DU170G Roving Networks / Microchip Technology	IGBT MODULE 1700V 400A 1660W SP6	0
FZ900R12KE4HOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 900A 4300W	39
FD800R17HP4KB2BOSA2 IR (Infineon Technologies)	FD800R17 - IGBT MODULE	170
F450R12KS4B11BOSA1 IR (Infineon Technologies)	F450R12 - IGBT MODULE	10
FS150R07PE4BOSA1 IR (Infineon Technologies)	IGBT MOD 650V 150A 430W	0
MG06100S-BN4MM Wickmann / Littelfuse	IGBT MODULE 600V 100A 330W S3	0
BYM600A170DN2HOSA1 IR (Infineon Technologies)	IGBT MODULE 1400W MED PWR 62MM-2	0
IXYN82N120C3H1 Wickmann / Littelfuse	IGBT MOD 1200V 105A 500W SOT227B	38170
IFF300B12N2E4PB11BPSA1 IR (Infineon Technologies)	IGBT MOD 1200V 600A 20MW	0
FF300R12ME4BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 450A 1600W	1
FS660R08A6P2FLBBPSA1 IR (Infineon Technologies)	HYBRID PACK DRIVE	0
IXGN200N60B3 Wickmann / Littelfuse	IGBT MOD 600V 300A 830W SOT227B	229
APT100GT120JR Roving Networks / Microchip Technology	IGBT MOD 1200V 123A 570W ISOTOP	0
FZ2400R12HE4PB9HPSA1 IR (Infineon Technologies)	IGBT MODULE 1200V 2400A	0
FS150R12KE3GBOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 200A 695W	0
FF450R06ME3BOSA1 IR (Infineon Technologies)	IGBT MOD 600V 550A 1250W	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability