Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF1500R17IP5PBPSA1

FF1500R17IP5PBPSA1

IR (Infineon Technologies)

IGBT MOD 1700V 1500A AGPRIME3+-5

3

FZ2400R17HP4B29BOSA2

FZ2400R17HP4B29BOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 4800A

1

APTGT50SK170T1G

APTGT50SK170T1G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 75A 312W SP1

18

F3L75R07W2E3B11BOMA1

F3L75R07W2E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 650V 95A 250W

15

FZ1500R33HL3BPSA1

FZ1500R33HL3BPSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 1500A

1

FS300R17KE3BOSA1

FS300R17KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 375A 1650W

0

APT200GN60JDQ4

APT200GN60JDQ4

Roving Networks / Microchip Technology

IGBT MOD 600V 283A 682W ISOTOP

17

FS225R12KE4BOSA1

FS225R12KE4BOSA1

IR (Infineon Technologies)

IGBT MODULE

1420

APT75GT120JU2

APT75GT120JU2

Roving Networks / Microchip Technology

IGBT MOD 1200V 100A 416W SOT227

55

FP15R06W1E3BOMA1

FP15R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 22A 81W

22

FF1400R12IP4BOSA1

FF1400R12IP4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1400A

4

FZ1200R45HL3BPSA1

FZ1200R45HL3BPSA1

IR (Infineon Technologies)

FZ1200R45 - IGBT MODULE

2

IXYN120N120C3

IXYN120N120C3

Wickmann / Littelfuse

IGBT MOD 1200V 240A SOT227B

4160

FF400R07A01E3S6XKSA2

FF400R07A01E3S6XKSA2

IR (Infineon Technologies)

MOD IGBT MED PWR 14MDIP

0

MG12150S-BN2MM

MG12150S-BN2MM

Wickmann / Littelfuse

IGBT MODULE 1200V 200A 625W S3

10

FS50R12KT4B11BOSA1

FS50R12KT4B11BOSA1

IR (Infineon Technologies)

FS50R12 - IGBT MODULE

138

FF300R06KE3B2HOSA1

FF300R06KE3B2HOSA1

IR (Infineon Technologies)

IGBT MOD 600V 400A 940W

0

FS450R17KE3BOSA1

FS450R17KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 605A 2250W

0

APT60GT60JRDQ3

APT60GT60JRDQ3

Roving Networks / Microchip Technology

IGBT 600V 105A 379W SOT227

0

FF150R12MS4GBOSA1

FF150R12MS4GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 225A 1250W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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