Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT41M80L Roving Networks / Microchip Technology	MOSFET N-CH 800V 43A TO264	0
APT10035JFLL Roving Networks / Microchip Technology	MOSFET N-CH 1000V 25A ISOTOP	0
TN0104N8-G Roving Networks / Microchip Technology	MOSFET N-CH 40V 630MA TO243AA	6649
APT1201R5BVRG Roving Networks / Microchip Technology	MOSFET N-CH 1200V 10A TO247	90
APT11N80BC3G Roving Networks / Microchip Technology	MOSFET N-CH 800V 11A TO247	211
APT30M36LLLG Roving Networks / Microchip Technology	MOSFET N-CH 300V 84A TO264	0
APTM20DAM05G Roving Networks / Microchip Technology	MOSFET N-CH 200V 317A SP6	0
APT17F80B Roving Networks / Microchip Technology	MOSFET N-CH 800V 18A TO247	0
APT80F60J Roving Networks / Microchip Technology	MOSFET N-CH 600V 84A ISOTOP	0
TN2501N8-G Roving Networks / Microchip Technology	MOSFET N-CH 18V 400MA TO243AA	0
MIC94050YM4-TR Roving Networks / Microchip Technology	MOSFET P-CH 6V 1.8A SOT-143	0
APT34F60B Roving Networks / Microchip Technology	MOSFET N-CH 600V 36A TO247	35
VN2460N3-G-P014 Roving Networks / Microchip Technology	MOSFET N-CH 600V 160MA TO92-3	0
APT17F80S Roving Networks / Microchip Technology	MOSFET N-CH 800V 18A D3PAK	0
APT60M75L2FLLG Roving Networks / Microchip Technology	MOSFET N-CH 600V 73A 264 MAX	0
VP3203N3-G Roving Networks / Microchip Technology	MOSFET P-CH 30V 650MA TO92-3	1454
APTM120U10SAG Roving Networks / Microchip Technology	MOSFET N-CH 1200V 116A SP6	0
APT20M45BVRG Roving Networks / Microchip Technology	MOSFET N-CH 200V 56A TO247	0
TN2435N8-G Roving Networks / Microchip Technology	MOSFET N-CH 350V 365MA TO243AA	1897
APTM20UM03FAG Roving Networks / Microchip Technology	MOSFET N-CH 200V 580A SP6	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS