Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
APT100M50J Roving Networks / Microchip Technology	MOSFET N-CH 500V 103A SOT227	0
TN0110N3-G-P002 Roving Networks / Microchip Technology	MOSFET N-CH 100V 350MA TO92-3	0
APT10M19BVRG Roving Networks / Microchip Technology	MOSFET N-CH 100V 75A TO247	0
APT10045B2FLLG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 23A T-MAX	0
TN0604N3-G-P005 Roving Networks / Microchip Technology	MOSFET N-CH 40V 700MA TO92-3	0
TN5325N3-G-P002 Roving Networks / Microchip Technology	MOSFET N-CH 250V 215MA TO92-3	0
APTM50SKM19G Roving Networks / Microchip Technology	MOSFET N-CH 500V 163A SP6	0
APTM50SKM17G Roving Networks / Microchip Technology	MOSFET N-CH 500V 180A SP6	0
APTM20DAM08TG Roving Networks / Microchip Technology	MOSFET N-CH 200V 208A SP4	0
APTM50UM13SAG Roving Networks / Microchip Technology	MOSFET N-CH 500V 335A SP6	0
APTM20UM04SAG Roving Networks / Microchip Technology	MOSFET N-CH 200V 417A SP6	0
APTM10SKM02G Roving Networks / Microchip Technology	MOSFET N-CH 100V 495A SP6	0
APTM10DAM02G Roving Networks / Microchip Technology	MOSFET N-CH 100V 495A SP6	0
APTM120UM70FAG Roving Networks / Microchip Technology	MOSFET N-CH 1200V 171A SP6	0
MSC025SMA120B4 Roving Networks / Microchip Technology	TRANS SJT N-CH 1200V 103A TO247	74
MSC080SMA120B4 Roving Networks / Microchip Technology	TRANS SJT N-CH 1200V 37A TO247-4	109
MSC180SMA120B Roving Networks / Microchip Technology	MOSFET 1200V 25A TO-247	41
APTM100DAM90G Roving Networks / Microchip Technology	MOSFET N-CH 1000V 78A SP6	0
MSC060SMA070B4 Roving Networks / Microchip Technology	TRANS SJT N-CH 700V 39A TO247-4	115
APTM100DA18TG Roving Networks / Microchip Technology	MOSFET N-CH 1000V 43A SP4	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS