Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXFA20N85XHV Wickmann / Littelfuse	MOSFET N-CH 850V 20A TO263	0
IXFX160N30T Wickmann / Littelfuse	MOSFET N-CH 300V 160A PLUS247-3	0
IXTF1N450 Wickmann / Littelfuse	MOSFET N-CH 4500V 900MA I4PAC	875
IXTA36P15P Wickmann / Littelfuse	MOSFET P-CH 150V 36A TO263	220
IXFA4N85X Wickmann / Littelfuse	MOSFET N-CH 850V 3.5A TO263	4300
IXFT170N25X3HV Wickmann / Littelfuse	MOSFET N-CH 250V 170A TO268HV	63
IXTT48P20P Wickmann / Littelfuse	MOSFET P-CH 200V 48A TO268	2021590
IXTY4N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 4A TO252	0
IXTP4N80P Wickmann / Littelfuse	MOSFET N-CH 800V 3.6A TO220AB	43
IXFN170N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 170A SOT227B	57
IXFN48N50Q Wickmann / Littelfuse	MOSFET N-CH 500V 48A SOT-227B	0
IXTA44P15T Wickmann / Littelfuse	MOSFET P-CH 150V 44A TO263	5063550
IXTH5N100A Wickmann / Littelfuse	MOSFET N-CH 1000V 5A TO247	300
IXFT340N075T2 Wickmann / Littelfuse	MOSFET N-CH 75V 340A TO268	2880
IXTP2R4N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 2.4A TO220AB	50950
IXFQ90N20X3 Wickmann / Littelfuse	MOSFET N-CH 200V 90A TO3P	1350
IXTA06N120P-TRL Wickmann / Littelfuse	MOSFET N-CH 1200V 600MA TO263	13
IXFP3N120 Wickmann / Littelfuse	MOSFET N-CH 1200V 3A TO220AB	1471150
IXTH34N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 34A TO247	81
IXTX550N055T2 Wickmann / Littelfuse	MOSFET N-CH 55V 550A PLUS247-3	960

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS